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Abstract Hydrogen sulfide (H2S) has demonstrated several essential critical care benefits when delivered properly in low doses. The current state-of-the-art delivery systems rely on gaseous delivery of H2S to patients. WSU researchers have developed chemical agents that controllably decompose to release H2S and demonstrated their efficacy in biological...

Published: 6/4/2025 | Inventor(s): Ming Xian, Hua Wang, Yu Zhao

Keywords(s): Chemistry

Category(s): Technologies > Health & Well-being > Chemistry, Technologies > Health & Well-being > Pharmaceutical

DNA Nanocaged Enzymes

Compartmentalization increases the overall activity and specificity of encapsulated enzymes by protecting the enzymes, maintaining a high concentration of enzymes and substrates, and promoting substrate channeling. While there have been artificial enzymatic particles that have been created using compartmentalization by virus-like proteins, liposomes,...

Published: 2/13/2025 | Inventor(s): Jinglin Fu, Hao Yan, Neal Woodbury, Zhao Zhao

Keywords(s): Bioanalysis, Catalysis, Enzymes

Category(s): Advanced Materials/Nanotechnology, Bioanalytical Assays, Chemistries & Devices, Life Science (All LS Techs), Medical Diagnostics/Sensors

Biological H2S / COS Donation by Thiocarbamates

1. Technology Overview The invention focuses on biological hydrogen sulfide (H₂S) and carbonyl sulfide (COS) donation using thiocarbamates. These compounds release COS, which is then converted to H₂S by hydrolysis or metabolism by carbonic anhydrase. The technology is currently in the development stage, with promising cross-industry applications in...

Published: 1/7/2026 | Inventor(s): Michael Pluth, Andrea Steiger, Yu Zhao

Keywords(s):

Category(s): Chemistry, Physical Science, Therapeutics

Compounds for Thiol-Triggered COS and/or H2S Release and Methods of Making and Using the Same

1. Technology Overview The invention focuses on thiol-triggered sulfenyl thiocarbonates and sulfenyl thiocarbamates that release carbonyl sulfide (COS) and hydrogen sulfide (H₂S) in the presence of biologically relevant thiols. These compounds offer a concomitant fluorescence response, providing optical indication of COS and H₂S release. The technology...

Published: 1/2/2026 | Inventor(s): Michael Pluth, Yu Zhao, Matt Cerda

Keywords(s): Science

Category(s): Chemistry, Engineering, Medical Devices, Physical Science, Therapeutics

Regrown p-GaN by Metalorganic Chemical Vapor Deposition (MOCVD) for GaN Vertical-Channel Junction Field-Effect Transistors (VCJFETs)

Background GaN-based power electronics has been under extensive research due to GaN’s large bandgap, high breakdown electric field (Eb), and large Baliga’s figure of merit (BFOM). With the availability of high-quality bulk GaN substrates, GaN vertical devices have become prominent candidates for next-generation power applications, capable...

Published: 11/25/2025 | Inventor(s): Yuji Zhao, Chen Yang, Houqiang Fu, Xuanqi Huang, Kai Fu

Keywords(s):

Category(s): Physical Science, Advanced Materials/Nanotechnology, Semiconductors, Materials & Processes, Semiconductor Devices

Controlled Vapor-phase ion-gating (VPIG) and ion capping of Nanomaterials

INV-17050 Background The investigation of charged particles is a fundamental aspect of several disciplines including physics, astronomy, atmospheric science, and geophysics, and, in addition to ion gauge based pressure metrology, forms a critical component of numerous advanced applications such as mass spectroscopy, plasma acceleration, oncology,...

Published: 8/20/2025 | Inventor(s): Swastik Kar, Ji Hao, Daniel Rubin, Yung Joon Jung

Keywords(s): Carbon nanotubes, nanoparticles

Category(s): Technology Classifications > 2. Physical Science > Electronics/Semiconductors, Not in use > -Materials, Not in use > -Nanotechnology

Vapour-phase gating induced single-ion detection in graphene and single-wall carbon nanotube networks

INV-17012 Background Miniaturized devices having ultrasensitive ion detection capability are useful as ion detectors in diverse applications, including detection of radioactive material or other sources of radiation, electron/ion beam calibration, monitoring of pressure or vacuum, and detection of energetic particles from outer space. Carbon nanotubes...

Published: 8/20/2025 | Inventor(s): Swastik Kar, Ji Hao, Yung Joon Jung

Keywords(s):

Category(s): Not in use > -Sensors tech, Not in use > -Materials

Plasma-Based Edge Terminations for GaN Power Devices

Background Due to GaN’s large bandgap, high breakdown electric field (Eb), and large Baliga’s figure of merit (BFOM), GaN-based power electronics have attracted interest for high-voltage, high-power, and efficient power conversion applications. High-voltage power diodes often demand termination techniques to mitigate the premature breakdown...

Published: 11/25/2025 | Inventor(s): Yuji Zhao, Houqiang Fu, Kai Fu

Keywords(s):

Category(s): Semiconductor Devices, Semiconductors, Materials & Processes, Advanced Materials/Nanotechnology, Physical Science

Low-Leakage Regrown GaN P-N Junctions for GaN Power Devices

Background The wide-bandgap (WBG) semiconductor gallium nitride (GaN) has attracted considerable attention for efficient power conversion applications due to its large bandgap (3.4 eV), high breakdown electric field (~3.0 MV/cm) and high Baliga’s figure of merit (~1000 times larger than that of Si). Previously, due to the lack of native GaN substrates,...

Published: 11/25/2025 | Inventor(s): Yuji Zhao, Kai Fu, Houqiang Fu

Keywords(s):

Category(s): Physical Science, Advanced Materials/Nanotechnology, Semiconductors, Materials & Processes

GaN-Based Threshold Switching Device and Memory Diode

Background Resistive random access memory (RRAM) has become one of the most promising memory types due to its scalability, low programming voltage, and fast write/read speeds. For large-capacity, nonvolatile memory applications, the cross-point (or crossbar) array is an attractive RRAM architecture. However, sneak paths—unintended currents flowing...

Published: 2/13/2025 | Inventor(s): Kai Fu, Houqiang Fu, Yuji Zhao

Keywords(s):

Category(s): Semiconductor Devices, Semiconductors, Materials & Processes, Physical Science, Computing & Information Technology

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