Controlled Vapor-phase ion-gating (VPIG) and ion capping of Nanomaterials

INV-17050

 

The investigation of charged particles is a fundamental aspect of several disciplines including physics, astronomy, atmospheric science, and geophysics, and, in addition to ion gauge based pressure metrology, forms a critical component of numerous advanced applications such as mass spectroscopy, plasma acceleration, oncology, radiation dosimetry, and radioactive threat detection. A variety of instruments are used to detect or count charged particles, including Faraday cups, Geiger counters, electron multiplier tubes, and solid‐state semiconductor detectors. These instruments are often bulky, require high operational voltages and vacuum, or are expensive or have poor detection limit. A low‐cost, lightweight, miniaturized, scalable, low‐power, and ultrahigh performance nano electronics based ion detection technology could result in a paradigm shift in many of the above mentioned metrologies, revolutionize imaging of radiation sources, and dramatically impact various scientific, engineering, space, and strategic applications.

 

The vapor phase ion-gating is a newly developed method for inducing electronic carriers (electrons and holes) in nanomaterials, and especially works most effectively in atomically thin, layered, or two-dimensional materials, and that it can lead to high-density carrier inducement (measured up to 6x10^13 carriers/cm2 and potentially up to and beyond 10^14 carriers/cm2). This technique can be used to adjust the optical and electronic properties of nanomaterials in a bias-free, electrode-free, and electrolyte-free method. The nature of the ion-gating is such that it can be stabilized using a secondary “capping” layer, which has been demonstrated by using an insulating polymer (PDMS), but in principle could be capped using other insulating layers/films/coatings and the like. 

This technique has the potential to create a new era of 2D and other nanomaterial based devices by enabling tunable and selectable carrier concentrations in arbitrary ultrathin nanomaterials.

 

- Non-invasive

- Technique for modulating nanomaterial properties 

- It is very easy to operate without requiring any complex process or setups 

- The capping area can be selected

- High efficiency ion retention rate 

- The capping process can be easily repeatable 

 

- New types of electronic devices: 

   The new types of PN junction devices 

   Tunneling field-effect devices 

   Bipolar junction devices 

   Optoelectronics device

- Adjustment of properties of 2D materials 

- Ion capturing 

 

- License

- Partnering

- Research collaboration