Search Results - kai+fu

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Molecular Classification of Primary Mediastinal Large B Cell Lymphoma Using Formalin-Fixed, Paraffin-Embedded Tissue Specimens
Abstract: Primary mediastinal B-cell lymphoma (PMBCL) is an aggressive type of non-Hodgkin lymphoma that mostly occurs in people between the ages of 30-40. It accounts for 5-7% of all aggressive lymphomas. The diagnosis of PMBCL is challenging as the histological features of PMBCL overlap with diffuse large B-cell lymphoma (DLBCL), another most common...
Published: 4/8/2024   |   Inventor(s): Louis Staudt, Lisa Rimsza, David Scott, George Wright, Anja Mottok, Christian Steid, Elaine Jaffe, Randy Gascoyne, Elias Guerri, Elias Guerri, Elias Guerri, Andreas Rosenwald, Kai Fu, Timothy Greiner, Erlend Smeland, Jan Delabie, Rita Braziel, Wing Chan, Joo Song, Dennis Weisenburger, German Ott, James Cook
Keywords(s): assay, Diffuse Large B Cell Lymphoma, DLBCL, FFPE, Formalin-fixed, GENE EXPRESSION, paraffin-embedded biopsies, PMBCL, Primary Mediastinal Large B Cell Lymphoma, Staudt
Category(s): Collaboration Sought > Collaboration, Collaboration Sought > Licensing, TherapeuticArea > Oncology, Application > Diagnostics
Clinical Outcome Predictors for Mantle Cell Lymphoma
Abstract: Mantle cell lymphoma (MCL) is a group of aggressive B-cell lymphomas displaying heterogeneous outcomes after treatment.  Some patients have the slowly progressing disease that does not require immediate treatment, while others have a disease that rapidly progresses despite highly aggressive treatment. A number of prognostic tools have been...
Published: 8/14/2024   |   Inventor(s): Louis Staudt, David Scott, George Wright, Andreas Rosenwald, Pau Abrisqueta, Rita Braziel, Elias Guerri, Wing Chan, Joseph Connors, Diego Villa, Kai Fu, Randy Gascoyne, Timothy Greiner, Elaine Jaffe, Graham Slack, James Cook, Jan Delabie, German Ott, Lisa Rimsza, Dennis Weisenburger, Anja Mottok, Pedro Jares
Keywords(s): B-cell lymphomas, Gene expression profile, Mantle cell lymphoma, Prognostic tool
Category(s): Collaboration Sought > Collaboration, Collaboration Sought > Licensing, Application > Diagnostics, TherapeuticArea > Oncology
Regrown p-GaN by Metalorganic Chemical Vapor Deposition (MOCVD) for GaN Vertical-Channel Junction Field-Effect Transistors (VCJFETs)
Background GaN-based power electronics has been under extensive research due to GaN’s large bandgap, high breakdown electric field (Eb), and large Baliga’s figure of merit (BFOM). With the availability of high-quality bulk GaN substrates, GaN vertical devices have become prominent candidates for next-generation power applications, capable...
Published: 2/23/2023   |   Inventor(s): Yuji Zhao, Chen Yang, Houqiang Fu, Xuanqi Huang, Kai Fu
Keywords(s):  
Category(s): Physical Science, Advanced Materials/Nanotechnology, Semiconductors, Materials & Processes, Semiconductor Devices
Plasma-Based Edge Terminations for GaN Power Devices
Background Due to GaN’s large bandgap, high breakdown electric field (Eb), and large Baliga’s figure of merit (BFOM), GaN-based power electronics have attracted interest for high-voltage, high-power, and efficient power conversion applications. High-voltage power diodes often demand termination techniques to mitigate the premature breakdown...
Published: 2/23/2023   |   Inventor(s): Yuji Zhao, Houqiang Fu, Kai Fu
Keywords(s):  
Category(s): Semiconductor Devices, Semiconductors, Materials & Processes, Advanced Materials/Nanotechnology, Physical Science
Low-Leakage Regrown GaN P-N Junctions for GaN Power Devices
Background The wide-bandgap (WBG) semiconductor gallium nitride (GaN) has attracted considerable attention for efficient power conversion applications due to its large bandgap (3.4 eV), high breakdown electric field (~3.0 MV/cm) and high Baliga’s figure of merit (~1000 times larger than that of Si). Previously, due to the lack of native GaN substrates,...
Published: 2/23/2023   |   Inventor(s): Yuji Zhao, Kai Fu, Houqiang Fu
Keywords(s):  
Category(s): Physical Science, Advanced Materials/Nanotechnology, Semiconductors, Materials & Processes
GaN-Based Threshold Switching Device and Memory Diode
Background Resistive random access memory (RRAM) has become one of the most promising memory types due to its scalability, low programming voltage, and fast write/read speeds. For large-capacity, nonvolatile memory applications, the cross-point (or crossbar) array is an attractive RRAM architecture. However, sneak paths—unintended currents flowing...
Published: 2/23/2023   |   Inventor(s): Kai Fu, Houqiang Fu, Yuji Zhao
Keywords(s):  
Category(s): Semiconductor Devices, Semiconductors, Materials & Processes, Physical Science, Computing & Information Technology
Methods for Identifying, Diagnosing, and Predicting Survival of Lymphomas
The present invention discloses methods for identifying, diagnosing, and predicting survival in a lymphoma or lymphoproliferative disorder on the basis of gene expression patterns. The invention discloses a novel microarray, the Lymph Dx microarray, for obtaining gene expression data from a lymphoma sample. The invention also discloses a variety of...
Published: 5/7/2024   |   Inventor(s): Richard Fisher, George Wright, Sandeep Dave, Bruce Tan, Louis Staudt, John Powell, Wyndham Wilson, Elaine Jaffe, Wing Chan, Timothy Greiner, Dennis Weisenburger, James Armitage, Kai Fu, Lisa Rimza, Thomas Miller, Thomas Grogan, Elias Campo Guerri, Silvia Bea, Itziar Salaverria, Armando Lopez-Guillermo, Emilio Montserrat Costa, Victor Moreno, Andreas Zettl, German Ott, Hans-Konrad Muller-Hermelink, Andreas Rosenwald, Julie Vose, Randy Gascoyne, Joseph Connors, Erlend Smeland, Stein Kvaloy, Harald Holte, Jan Delabie, Andrew Lister
Keywords(s):  
Category(s): Diagnostic