Search Results - houqiang+fu

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β-Ga₂O₃ in the Construction of NiO/β-Ga₂O₃ p-n Diodes
Background Silicon (Si) is the most widely used semiconductor for many reasons including its abundance, cost-effectiveness, and excellent electrical properties. However, its lower breakdown voltage and thermal limitations make it less suitable for high-power, high- frequency and high-temperature applications. The uniformity in silicon's crystal...
Published: 6/24/2024   |   Inventor(s): Houqiang Fu, Dinusha Herath Mudiyanselage, Dawei Wang
Keywords(s):  
Category(s): Physical Science, Semiconductors, Materials & Processes, Energy & Power, Applied Technologies
KV-Class and Low RON Vertical β-Ga2O3 HEMT-CAVET Power Switch
Background Beta-gallium oxide (β-Ga2O3) has become a promising candidate for high-power, high-voltage, and high-frequency applications due to its ultrawide bandgap (-4.8 eV), high critical electric field (-8 MV/cm), and large Baliga’s figure of merit. Compared with lateral devices such as high electron mobility transistors (HEMTs), vertical...
Published: 6/24/2024   |   Inventor(s): Houqiang Fu, Dawei Wang, Dinusha Herath Mudiyanselage
Keywords(s):  
Category(s): Energy & Power, Physical Science, Applied Technologies, Semiconductors, Materials & Processes
Regrown p-GaN by Metalorganic Chemical Vapor Deposition (MOCVD) for GaN Vertical-Channel Junction Field-Effect Transistors (VCJFETs)
Background GaN-based power electronics has been under extensive research due to GaN’s large bandgap, high breakdown electric field (Eb), and large Baliga’s figure of merit (BFOM). With the availability of high-quality bulk GaN substrates, GaN vertical devices have become prominent candidates for next-generation power applications, capable...
Published: 2/23/2023   |   Inventor(s): Yuji Zhao, Chen Yang, Houqiang Fu, Xuanqi Huang, Kai Fu
Keywords(s):  
Category(s): Physical Science, Advanced Materials/Nanotechnology, Semiconductors, Materials & Processes, Semiconductor Devices
Plasma-Based Edge Terminations for GaN Power Devices
Background Due to GaN’s large bandgap, high breakdown electric field (Eb), and large Baliga’s figure of merit (BFOM), GaN-based power electronics have attracted interest for high-voltage, high-power, and efficient power conversion applications. High-voltage power diodes often demand termination techniques to mitigate the premature breakdown...
Published: 2/23/2023   |   Inventor(s): Yuji Zhao, Houqiang Fu, Kai Fu
Keywords(s):  
Category(s): Semiconductor Devices, Semiconductors, Materials & Processes, Advanced Materials/Nanotechnology, Physical Science
Low-Leakage Regrown GaN P-N Junctions for GaN Power Devices
Background The wide-bandgap (WBG) semiconductor gallium nitride (GaN) has attracted considerable attention for efficient power conversion applications due to its large bandgap (3.4 eV), high breakdown electric field (~3.0 MV/cm) and high Baliga’s figure of merit (~1000 times larger than that of Si). Previously, due to the lack of native GaN substrates,...
Published: 2/23/2023   |   Inventor(s): Yuji Zhao, Kai Fu, Houqiang Fu
Keywords(s):  
Category(s): Physical Science, Advanced Materials/Nanotechnology, Semiconductors, Materials & Processes
GaN-Based Threshold Switching Device and Memory Diode
Background Resistive random access memory (RRAM) has become one of the most promising memory types due to its scalability, low programming voltage, and fast write/read speeds. For large-capacity, nonvolatile memory applications, the cross-point (or crossbar) array is an attractive RRAM architecture. However, sneak paths—unintended currents flowing...
Published: 2/23/2023   |   Inventor(s): Kai Fu, Houqiang Fu, Yuji Zhao
Keywords(s):  
Category(s): Semiconductor Devices, Semiconductors, Materials & Processes, Physical Science, Computing & Information Technology
Aluminum nitride (AlN) Power Devices
Aluminum Nitride (AlN) Power Devices Background Wurtzite AIN has the largest bandgap (6.2 eV) among the wide bandgap semiconductor family including SiC (3.3 eV), GaN (3.4 eV), β-Ga2O3 (4.8 eV) and diamond (5.5 eV), which are attractive for various optoelectronic and electronic applications. However, due to the challenges in material growth and...
Published: 2/23/2023   |   Inventor(s): Yuji Zhao, Houqiang Fu
Keywords(s):  
Category(s): Applied Technologies, Advanced Materials/Nanotechnology, Energy & Power, Physical Science