Search Results - semiconductor+devices

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Carbonized Cellulose Fiber and Composites for Ultrafast Electrochemical Capacitors
Background Filtering capacitors are ubiquitous components used in power conversion and conditioning for electronic devices, industrial power supplies, electrified transportation, and renewable energy generation. Aluminum electrolytic capacitors (AECs) have typically been used for these applications, particularly when large capacitance (>10µF)...
Published: 5/10/2024   |   Inventor(s): Zhaoyang Fan
Keywords(s):  
Category(s): Applied Technologies, Advanced Materials/Nanotechnology, Energy & Power, Physical Science, Semiconductor Devices
Clock Skewing for Area and Power Optimization of ASICs Using Differential Flipflops and Local Clocking
Synchronous logic remains the dominant design paradigm of digital systems such as Application Specific Integrated Circuits (ASICs). The conventional design of sequential circuit networks is based on the assumption that every register receives the clock signal at the same time. However, guaranteeing the simultaneity of clock arrival times in practice...
Published: 1/10/2024   |   Inventor(s): Sarma Vrudhula, Ankit Wagle
Keywords(s): Circuits, Computing Architecture, Electronics, Integrated Circuits, PS-Applied Technologies, PS-Semiconductor Devices
Category(s): Applied Technologies, Physical Science, Semiconductor Devices
High Efficiency, Wide Voltage Gain Power Converter System
Power converters convert electrical energy (e.g., convert alternating current (AC) into direct current (DC) and vice versa, change the voltage or frequency of current, or do some combination thereof). Transformers are key components in power converters and transfer electrical energy from one electrical circuit to another circuit or multiple circuits....
Published: 5/26/2023   |   Inventor(s): Mike Ranjram
Keywords(s): Power Electronics, PS-Semiconductor Devices
Category(s): Semiconductor Devices, Physical Science
Analog-To-Digital Converter (ADC) Architectures for High Resolution and Energy Efficiency
Analog-to-digital converters (ADCs) act as gatekeepers between physical world (analog) and data analytics (digital). In the IoT era of connected edge devices sensing various physical quantities for analysis in the cloud, ADCs need to have both high resolution (14-16 bits) and high energy efficiency at µW level power. High resolution data conversion...
Published: 6/30/2023   |   Inventor(s): Arindam Sanyal
Keywords(s): PS-Semiconductor Devices
Category(s): Physical Science, Semiconductor Devices
Nanotwinned Ni Films with High Strength and Ductility
Background Metallic films are commonly used as interconnects in semiconductor devices, flexible electronic devices, and micro-electronic-mechanical systems (MEMS). These applications typically require good mechanical (e.g., high strength) and electrical (e.g., low resistivity) properties. Nanocrystalline or nanolaminate films are commonly used, and...
Published: 5/4/2023   |   Inventor(s): Jagannathan Rajagopalan, Rohit Berlia
Keywords(s):  
Category(s): Physical Science, Manufacturing/Construction/Mechanical, Semiconductors, Materials & Processes, Semiconductor Devices, Energy & Power, Advanced Materials/Nanotechnology
Self-Charging Liquid Droplet Capacitor for Harvesting Ambient Energy
­Potential Applications • Self-powered sensors • Biomedical implants • Internet-of-Things (IoT) devices • Remote monitoring • Portable electronics Benefits and Advantages • Exponential increase in harvested energy – Positive feedback by continuous capacitor switching delivers exponentially more...
Published: 2/23/2023   |   Inventor(s): Tianwei Ma, Jian Yu
Keywords(s):  
Category(s): Physical Science, Semiconductor Devices, Alternative Energy, Alternative Energy/Biofuels/Bioplastics/Algae, Energy & Power
Semiconductor-Based Selective Emitter with Sharp Cutoff for Thermophotovoltaic Energy Conversion
­Background Thermophotovoltaic (TPV) devices convert thermal radiation from a high-temperature emitter to electricity via a narrow-bandgap photovoltaic (PV) cell. Since the emitter can be heated by any kind of heat source (e.g., combustible fuel, solar energy, waste heat), the TPV technique has a wide range of applications. However, due to the mismatch...
Published: 2/23/2023   |   Inventor(s): Liping Wang, Qing Ni, Rajagopalan Ramesh
Keywords(s):  
Category(s): Physical Science, Semiconductors, Materials & Processes, Semiconductor Devices, Advanced Materials/Nanotechnology, Alternative Energy, Energy & Power
Reconstructing Charge Collection Efficiency in Three Dimensions
Background The charge collection efficiency is a critical metric to evaluate the local electrical performance of optoelectronic devices. For example, defects show up as reduced charge collection efficiency. In two dimensions, the charge collection efficiency can, for example, be evaluated by the analysis of laser-beam induced current (LBIC), electron-beam...
Published: 2/23/2023   |   Inventor(s): Michael Stueckelberger, Xiaogang Yang, Mariana Bertoni
Keywords(s):  
Category(s): Physical Science, Advanced Materials/Nanotechnology, Semiconductor Devices, Semiconductors, Materials & Processes
Multijunction Solar Cell with Thin-Film Polycrystalline Low-Bandgap Bottom Cell
There is a need for solar cells with highly efficient light-to-electricity conversion and lower cost. Multijunction cells, which include multiple light-absorbing materials, each of which converts a given wavelength range of the solar spectrum, can be used to provide greater conversion efficiency than single-junction thin-film solar cells. However,...
Published: 3/10/2023   |   Inventor(s): Richard King
Keywords(s): Energy Efficiency, PS-Advanced Materials and Nanotechnology, PS-Energy and Power, PS-Semiconductors, Materials, Processes, Solar cells, Solar Energy
Category(s): Physical Science, Semiconductors, Materials & Processes, Semiconductor Devices, Advanced Materials/Nanotechnology, Alternative Energy, Energy & Power, Manufacturing/Construction/Mechanical
Regrown p-GaN by Metalorganic Chemical Vapor Deposition (MOCVD) for GaN Vertical-Channel Junction Field-Effect Transistors (VCJFETs)
Background GaN-based power electronics has been under extensive research due to GaN’s large bandgap, high breakdown electric field (Eb), and large Baliga’s figure of merit (BFOM). With the availability of high-quality bulk GaN substrates, GaN vertical devices have become prominent candidates for next-generation power applications, capable...
Published: 2/23/2023   |   Inventor(s): Yuji Zhao, Chen Yang, Houqiang Fu, Xuanqi Huang, Kai Fu
Keywords(s):  
Category(s): Physical Science, Advanced Materials/Nanotechnology, Semiconductors, Materials & Processes, Semiconductor Devices
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