Search Results - semiconductor+devices

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Advanced Modeling and Optimization of Multi-Active Bridge Converters
Invention Description Theoretical models of MAB converters usually assume ideal components, but real-world systems suffer from various parasitic effects that skew power transfer predictions. These include MOSFET on-state resistances, AC winding losses in inductors/transformers, and the ESR of both DC blocking and DC link capacitors, all of which introduce...
Published: 7/14/2026   |   Updated: 7/14/2026   |   Inventor(s): Ayan Mallik, Saikat Dey
Keywords(s):  
Category(s): Semiconductor Devices, Semiconductors, Materials & Processes, Physical Science, Artificial Intelligence/Machine Learning
OCTANE: On Chip Telemetry-based Anomaly Notification Engine
Invention Description Integrating hardware into safety- and mission-critical systems has sparked strong demand for combined edge and cloud solutions. This ecosystem helps extend product lifespan while maintaining service quality, driven largely by the Silicon Lifecycle Management (SLM) framework. Silicon Lifecycle Management (SLM) ensures hardware...
Published: 7/8/2026   |   Updated: 7/8/2026   |   Inventor(s): Eduardo Ortega, Krishnendu Chakrabarty
Keywords(s):  
Category(s): Computing & Information Technology, Microelectronics, Semiconductor Devices, Semiconductors, Materials & Processes, Intelligence & Security
SMART: Scalable and Modular Architecture for Routing-Aware Testing of FOWLP
Invention Description Fan-out wafer-level packaging (FOWLP) is an advanced packaging technology that connects multiple chiplets using copper (Cu) pillars and redistribution layers (RDLs). As chiplet-based designs become more complex, they require multi-layer RDLs, which are more prone to defects such as opens, shorts, coupling, and electromigration...
Published: 7/6/2026   |   Updated: 7/6/2026   |   Inventor(s): Dhruv Thapar, Partho Bhoumik, Krishnendu Chakrabarty
Keywords(s):  
Category(s): Microelectronics, Physical Science, Semiconductor Devices, Semiconductors, Materials & Processes
PRISM: Priority-first Repair with Intelligent Spare Mapping
Invention Description As the semiconductor industry transitions from monolithic dies to chiplet-based architectures, interconnect density has increased dramatically, making copper pillars and redistribution layers more susceptible to defects such as voids, delamination, and bridging shorts. Conventional repair approaches, including those defined by...
Published: 7/6/2026   |   Updated: 7/6/2026   |   Inventor(s): Partho Bhoumik, Krishnendu Chakrabarty
Keywords(s):  
Category(s): Physical Science, Semiconductors, Materials & Processes, Semiconductor Devices, Microelectronics
AI-driven Analog-to-Digital Converter (ADC) Design Automation
Invention Description Designing high-performance analog circuits, such as analog-to-digital converters (ADCs), is a complex and time-intensive process that typically requires significant expert knowledge and manual tuning. Traditional design methods rely heavily on iterative trial-and-error, making it difficult to efficiently meet strict performance...
Published: 4/16/2026   |   Updated: 4/16/2026   |   Inventor(s): Arindam Sanyal, Imon Banerjee, Zuwei Guo, Shamma Nasrin
Keywords(s):  
Category(s): Manufacturing/Construction/Mechanical, Physical Science, Semiconductors, Materials & Processes, Semiconductor Devices
Permittivity Based Functional Composites for Enhanced Electric Field Management
Invention Description The push for smaller, more efficient, and high-performance power electronics systems is fueling the rapid adoption of Wide Bandgap (WBG) and Ultrawide Bandgap (UWBG) semiconductors. Compared to traditional silicon (Si), these advanced materials allow devices to operate at higher voltages, faster switching frequencies, and elevated...
Published: 3/31/2026   |   Updated: 3/31/2026   |   Inventor(s): Chanyeop Park, Omar Faruqe
Keywords(s):  
Category(s): Advanced Materials/Nanotechnology, Microelectronics, Physical Science, Semiconductors, Materials & Processes, Semiconductor Devices
High-Voltage AlN MESFET on Single-Crystal AlN Substrates
Invention Description Ultrawide bandgap materials (UWGP) like Ga₂O₃, diamond, and aluminum nitride (AlN) are promising for next generation high voltage, high temperature electronics due to their superior properties. AlN with its wide 6.2 eV bandgap and high 12 MV/cm breakdown field, is particularly attractive for high power applications. However, its...
Published: 2/26/2026   |   Updated: 11/21/2025   |   Inventor(s): Houqiang Fu, Bingcheng Da, Dinusha Herath Mudiyanselage
Keywords(s): Device, Electric Power Engineering, Electronics, Semiconductor Processing
Category(s): Semiconductors, Materials & Processes, Semiconductor Devices, Physical Science, Microelectronics, Manufacturing/Construction/Mechanical, Advanced Materials/Nanotechnology
Ultrafast Thin-Film Vapor Deposition Technique
Invention Description The demand for advanced thin-film deposition techniques has grown substantially in recent years, driven by the development of next-generation electronic, optoelectronic, and energy devices. Traditional deposition methods, such as chemical vapor deposition, molecular beam epitaxy, and physical vapor deposition, have well-established...
Published: 2/26/2026   |   Updated: 11/18/2025   |   Inventor(s): Feng Yan, Lin Li
Keywords(s):  
Category(s): Semiconductors, Materials & Processes, Microelectronics, Physical Science, Semiconductor Devices, Manufacturing/Construction/Mechanical
Nanoparticle-Based Inductive Heating for Advanced Semiconductor Underfill Curing
Invention Description The semiconductor industry has long relied on thermoset polymers for their superior thermal and mechanical stability in advanced packaging applications such as capillary underfills (CUFs), molded underfills (MUFs), and over-mold compounds. However, as devices evolve toward complex multidie 2D, 2.5D, and 3D architectures, traditional...
Published: 2/26/2026   |   Updated: 11/18/2025   |   Inventor(s): Yoan Simon
Keywords(s): Semiconductor Processing
Category(s): Advanced Materials/Nanotechnology, Manufacturing/Construction/Mechanical, Microelectronics, Physical Science, Semiconductors, Materials & Processes, Semiconductor Devices
10kV-Class Gallium Nitride (GaN) Power Device with Hydrogen Plasma Manufacturing
Invention Description Gallium Nitride (GaN) is a wide bandgap semiconductor that has gained significant attention in recent years specifically for use in RF and power electronics due to its excellent material properties and better performance compared to traditional silicon (Si) devices. GaN based lateral high electron mobility transistors (HEMTs)...
Published: 2/26/2026   |   Updated: 10/3/2025   |   Inventor(s): Houqiang Fu, Dawei Wang, Dinusha Herath Mudiyanselage
Keywords(s):  
Category(s): Semiconductors, Materials & Processes, Semiconductor Devices, Physical Science, Alternative Energy, Energy & Power, Manufacturing/Construction/Mechanical
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