Search Results - semiconductor+devices

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AI-driven Analog-to-Digital Converter (ADC) Design Automation
Invention Description Designing high-performance analog circuits, such as analog-to-digital converters (ADCs), is a complex and time-intensive process that typically requires significant expert knowledge and manual tuning. Traditional design methods rely heavily on iterative trial-and-error, making it difficult to efficiently meet strict performance...
Published: 4/16/2026   |   Updated: 4/16/2026   |   Inventor(s): Arindam Sanyal, Imon Banerjee, Zuwei Guo, Shamma Nasrin
Keywords(s):  
Category(s): Manufacturing/Construction/Mechanical, Physical Science, Semiconductors, Materials & Processes, Semiconductor Devices
Permittivity Based Functional Composites for Enhanced Electric Field Management
Invention Description The push for smaller, more efficient, and high-performance power electronics systems is fueling the rapid adoption of Wide Bandgap (WBG) and Ultrawide Bandgap (UWBG) semiconductors. Compared to traditional silicon (Si), these advanced materials allow devices to operate at higher voltages, faster switching frequencies, and elevated...
Published: 3/31/2026   |   Updated: 3/31/2026   |   Inventor(s): Chanyeop Park, Omar Faruqe
Keywords(s):  
Category(s): Advanced Materials/Nanotechnology, Microelectronics, Physical Science, Semiconductors, Materials & Processes, Semiconductor Devices
High-Voltage AlN MESFET on Single-Crystal AlN Substrates
Invention Description Ultrawide bandgap materials (UWGP) like Ga₂O₃, diamond, and aluminum nitride (AlN) are promising for next generation high voltage, high temperature electronics due to their superior properties. AlN with its wide 6.2 eV bandgap and high 12 MV/cm breakdown field, is particularly attractive for high power applications. However, its...
Published: 2/26/2026   |   Updated: 11/21/2025   |   Inventor(s): Houqiang Fu, Bingcheng Da, Dinusha Herath Mudiyanselage
Keywords(s): Device, Electric Power Engineering, Electronics, Semiconductor Processing
Category(s): Semiconductors, Materials & Processes, Semiconductor Devices, Physical Science, Microelectronics, Manufacturing/Construction/Mechanical, Advanced Materials/Nanotechnology
Ultrafast Thin-Film Vapor Deposition Technique
Invention Description The demand for advanced thin-film deposition techniques has grown substantially in recent years, driven by the development of next-generation electronic, optoelectronic, and energy devices. Traditional deposition methods, such as chemical vapor deposition, molecular beam epitaxy, and physical vapor deposition, have well-established...
Published: 2/26/2026   |   Updated: 11/18/2025   |   Inventor(s): Feng Yan, Lin Li
Keywords(s):  
Category(s): Semiconductors, Materials & Processes, Microelectronics, Physical Science, Semiconductor Devices, Manufacturing/Construction/Mechanical
Nanoparticle-Based Inductive Heating for Advanced Semiconductor Underfill Curing
Invention Description The semiconductor industry has long relied on thermoset polymers for their superior thermal and mechanical stability in advanced packaging applications such as capillary underfills (CUFs), molded underfills (MUFs), and over-mold compounds. However, as devices evolve toward complex multidie 2D, 2.5D, and 3D architectures, traditional...
Published: 2/26/2026   |   Updated: 11/18/2025   |   Inventor(s): Yoan Simon
Keywords(s): Semiconductor Processing
Category(s): Advanced Materials/Nanotechnology, Manufacturing/Construction/Mechanical, Microelectronics, Physical Science, Semiconductors, Materials & Processes, Semiconductor Devices
10kV-Class Gallium Nitride (GaN) Power Device with Hydrogen Plasma Manufacturing
Invention Description Gallium Nitride (GaN) is a wide bandgap semiconductor that has gained significant attention in recent years specifically for use in RF and power electronics due to its excellent material properties and better performance compared to traditional silicon (Si) devices. GaN based lateral high electron mobility transistors (HEMTs)...
Published: 2/26/2026   |   Updated: 10/3/2025   |   Inventor(s): Houqiang Fu, Dawei Wang, Dinusha Herath Mudiyanselage
Keywords(s):  
Category(s): Semiconductors, Materials & Processes, Semiconductor Devices, Physical Science, Alternative Energy, Energy & Power, Manufacturing/Construction/Mechanical
Measuring Ion Concentration as a Stability Metric in Perovskite Semiconductors
Perovskite materials, especially hybrid metal halide perovskite (MHP), have garnered significant attention because of their potential in the field of solar cells. However, the further development of perovskite materials has been plagued by their stability challenges. Because of the “soft” ionic nature of the lattice while being brittle and...
Published: 2/26/2026   |   Updated: 9/23/2025   |   Inventor(s): Saivineeth Penukula, Nicholas Rolston
Keywords(s):  
Category(s): Advanced Materials/Nanotechnology, Applied Technologies, Semiconductor Devices, Semiconductors, Materials & Processes, Energy & Power, Physical Science
Enhancing Luminescent Properties of Vapor-Deposited Perovskite Films Through Vapor Exposure
The industry of perovskite materials has been highly sought out for next generation technology and devices. Perovskite thin films have been used in a large array of applications including light-emitting diodes (LEDs), solar cells, lasers and photodetectors. However, within recent years the widely existing defects (from significant intrinsic point defects...
Published: 2/26/2026   |   Updated: 9/22/2025   |   Inventor(s): Jian Li
Keywords(s):  
Category(s): Advanced Materials/Nanotechnology, Physical Science, Semiconductor Devices, Semiconductors, Materials & Processes
Sapphire-Supported Substrates for Low-Noise Nanopore Sensing
-collapse: collapse; } Solid-state nanopores are attractive because of their low cost and broad potential utility from single-molecule bioanalytical sensing to diagnostics and sequencing of DNA and protein molecules. Unfortunately, conventional use of conductive silicon substrates results in high capacitive noise, significantly limiting sensing accuracy...
Published: 2/26/2026   |   Updated: 8/27/2025   |   Inventor(s): Chao Wang, Pengkun Xia
Keywords(s):  
Category(s): Advanced Materials/Nanotechnology, Bioanalytical Assays, Chemistries & Devices, Applied Technologies, Diagnostic Assays/Devices, Life Science (All LS Techs), Semiconductor Devices, Semiconductors, Materials & Processes
High-Performance Lateral AlN Schottky Barrier Diodes with Ultra-Low Ideality Factor
Background Aluminum nitride (AlN) has been studied in recent years as an ultra-wide bandgap semiconductor for next-generation high-voltage and high-temperature electronics. The ultra-wide bandgap and large critical breakdown of AlN enables these applications, but the development of AlN-based electronic devices faces many challenges. The controllable...
Published: 2/26/2026   |   Updated: 6/27/2025   |   Inventor(s): Dinusha Herath Mudiyanselage, Houqiang Fu, Dawei Wang
Keywords(s):  
Category(s): Physical Science, Energy & Power, Semiconductor Devices
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