Background
Aluminum nitride (AlN) has been studied in recent years as an ultra-wide bandgap semiconductor for next-generation high-voltage and high-temperature electronics. The ultra-wide bandgap and large critical breakdown of AlN enables these applications, but the development of AlN-based electronic devices faces many challenges. The controllable n-type doping of AlN epilayers is still very much under development, and the Schottky contacts to AlN with ideal barrier heights are difficult to achieve. In addition, all AlN-based electronic devices suffer from high ideality factors, indicating the current transport mechanism deviates from the well-known thermionic emission theory. Lastly, the large device area required increases the total device costs, especially given the high cost of AlN substrates.
Invention Description
Researchers at Arizona State University have developed lateral aluminum nitride (AlN) Schottky barrier diodes (SBDs) on single-crystal AlN substrates, achieved through metal-organic chemical vapor deposition (MOCVD). These diodes exhibit an ultra-low ideality factor, a high Schottky barrier height, and a record high breakdown voltage, which contribute to improved performance of semiconductor devices.
Potential Applications:
Benefits and Advantages:
Related Publication: Over 600 V Lateral AlN-on-AlN Schottky Barrier Diodes with Ultra-Low Ideality Factor