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Search Results - dinusha+herath+mudiyanselage
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β-Ga₂O₃ in the Construction of NiO/β-Ga₂O₃ p-n Diodes
Background Silicon (Si) is the most widely used semiconductor for many reasons including its abundance, cost-effectiveness, and excellent electrical properties. However, its lower breakdown voltage and thermal limitations make it less suitable for high-power, high- frequency and high-temperature applications. The uniformity in silicon's crystal...
Published: 6/24/2024
|
Inventor(s):
Houqiang Fu
,
Dinusha Herath Mudiyanselage
,
Dawei Wang
Keywords(s):
Category(s):
Physical Science
,
Semiconductors, Materials & Processes
,
Energy & Power
,
Applied Technologies
KV-Class and Low RON Vertical β-Ga2O3 HEMT-CAVET Power Switch
Background Beta-gallium oxide (β-Ga2O3) has become a promising candidate for high-power, high-voltage, and high-frequency applications due to its ultrawide bandgap (-4.8 eV), high critical electric field (-8 MV/cm), and large Baliga’s figure of merit. Compared with lateral devices such as high electron mobility transistors (HEMTs), vertical...
Published: 6/24/2024
|
Inventor(s):
Houqiang Fu
,
Dawei Wang
,
Dinusha Herath Mudiyanselage
Keywords(s):
Category(s):
Energy & Power
,
Physical Science
,
Applied Technologies
,
Semiconductors, Materials & Processes