Search Results - dinusha+herath+mudiyanselage

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Multi-Kilovolt AIN Power Diodes on Free-Standing Substrates
Background Aluminum nitride (AlN) is a promising ultra-wide bandgap (UWBG) semiconductor for next-generation power electronics due to its remarkable material attributes, including the largest bandgap in the UWBG semiconductor family, high breakdown field, and superior thermal conductivity. In recent years, AlN Schottky barrier diodes (SBDs) have already...
Published: 10/3/2024   |   Inventor(s): Houqiang Fu, Dinusha Herath Mudiyanselage, Dawei Wang
Keywords(s):  
Category(s): Energy & Power, Physical Science, Semiconductors, Materials & Processes
β-Ga₂O₃ in the Construction of NiO/β-Ga₂O₃ p-n Diodes
Background Silicon (Si) is the most widely used semiconductor for many reasons including its abundance, cost-effectiveness, and excellent electrical properties. However, its lower breakdown voltage and thermal limitations make it less suitable for high-power, high- frequency and high-temperature applications. The uniformity in silicon's crystal...
Published: 6/24/2024   |   Inventor(s): Houqiang Fu, Dinusha Herath Mudiyanselage, Dawei Wang
Keywords(s):  
Category(s): Physical Science, Semiconductors, Materials & Processes, Energy & Power, Applied Technologies
KV-Class and Low RON Vertical β-Ga2O3 HEMT-CAVET Power Switch
Background Beta-gallium oxide (β-Ga2O3) has become a promising candidate for high-power, high-voltage, and high-frequency applications due to its ultrawide bandgap (-4.8 eV), high critical electric field (-8 MV/cm), and large Baliga’s figure of merit. Compared with lateral devices such as high electron mobility transistors (HEMTs), vertical...
Published: 6/24/2024   |   Inventor(s): Houqiang Fu, Dawei Wang, Dinusha Herath Mudiyanselage
Keywords(s):  
Category(s): Energy & Power, Physical Science, Applied Technologies, Semiconductors, Materials & Processes