Search Results - dinusha+herath+mudiyanselage

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β-Ga₂O₃ in the Construction of NiO/β-Ga₂O₃ p-n Diodes
Background Silicon (Si) is the most widely used semiconductor for many reasons including its abundance, cost-effectiveness, and excellent electrical properties. However, its lower breakdown voltage and thermal limitations make it less suitable for high-power, high- frequency and high-temperature applications. The uniformity in silicon's crystal...
Published: 6/24/2024   |   Inventor(s): Houqiang Fu, Dinusha Herath Mudiyanselage, Dawei Wang
Keywords(s):  
Category(s): Physical Science, Semiconductors, Materials & Processes, Energy & Power, Applied Technologies
KV-Class and Low RON Vertical β-Ga2O3 HEMT-CAVET Power Switch
Background Beta-gallium oxide (β-Ga2O3) has become a promising candidate for high-power, high-voltage, and high-frequency applications due to its ultrawide bandgap (-4.8 eV), high critical electric field (-8 MV/cm), and large Baliga’s figure of merit. Compared with lateral devices such as high electron mobility transistors (HEMTs), vertical...
Published: 6/24/2024   |   Inventor(s): Houqiang Fu, Dawei Wang, Dinusha Herath Mudiyanselage
Keywords(s):  
Category(s): Energy & Power, Physical Science, Applied Technologies, Semiconductors, Materials & Processes