Search Results - dinusha+herath+mudiyanselage

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Multi-parametric Acoustic, Optical and Mechanical Imaging of Cervical Tissue Insufficiencies to Predict Preterm Birth
An enhanced image-guidance system that integrates ultrasound and photoacoustic into existing ablation systems to provide an enhanced image-guidance system for identification of cervical tissue changes during pregnancy and postpartum. Technology Summary Preterm delivery is a main cause of perinatal morbidity and mortality worldwide, which is associated...
Published: 9/15/2025   |   Inventor(s): Mohammad Mehrmohammadi, Sonia Hassan, Edgar Hernandez-Andrade, Yan Yan, Maryam Basij
Keywords(s): Driving Lifelong Health
Category(s): Life Science, Medical Devices, Imaging, Acoustics, Women's Health
High-Performance Lateral AlN Schottky Barrier Diodes with Ultra-Low Ideality Factor
Background Aluminum nitride (AlN) has been studied in recent years as an ultra-wide bandgap semiconductor for next-generation high-voltage and high-temperature electronics. The ultra-wide bandgap and large critical breakdown of AlN enables these applications, but the development of AlN-based electronic devices faces many challenges. The controllable...
Published: 6/27/2025   |   Inventor(s): Dinusha Herath Mudiyanselage, Houqiang Fu, Dawei Wang
Keywords(s):  
Category(s): Physical Science, Energy & Power, Semiconductor Devices
Sensitive Point-of-Care miRNA Detection Using a One-Pot, Isothermal Assay
Rapid, RNA Extraction-Free Detection of miRNAs Biomarkers for Accurate Cancer Diagnosis and Prognosis This CRISPR-Cas12a-based assay allows for the rapid, sensitive detection of microRNAs using a one-pot, isothermal process. MicroRNAs(miRNAs) are endogenous and short, non-coding single-stranded RNAs. They participate in various biological functions...
Published: 5/30/2025   |   Inventor(s): Yong Zeng, He Yan
Keywords(s):  
Category(s): Technology Classifications > Human Health Care > Diagnostics, Technology Classifications > Veterinary > Diagnostics
Multi-Kilovolt AIN Power Diodes on Free-Standing Substrates
Background Aluminum nitride (AlN) is a promising ultra-wide bandgap (UWBG) semiconductor for next-generation power electronics due to its remarkable material attributes, including the largest bandgap in the UWBG semiconductor family, high breakdown field, and superior thermal conductivity. In recent years, AlN Schottky barrier diodes (SBDs) have already...
Published: 2/13/2025   |   Inventor(s): Houqiang Fu, Dinusha Herath Mudiyanselage, Dawei Wang
Keywords(s):  
Category(s): Energy & Power, Physical Science, Semiconductors, Materials & Processes
β-Ga₂O₃ in the Construction of NiO/β-Ga₂O₃ p-n Diodes
Background Silicon (Si) is the most widely used semiconductor for many reasons including its abundance, cost-effectiveness, and excellent electrical properties. However, its lower breakdown voltage and thermal limitations make it less suitable for high-power, high- frequency and high-temperature applications. The uniformity in silicon's crystal...
Published: 2/13/2025   |   Inventor(s): Houqiang Fu, Dinusha Herath Mudiyanselage, Dawei Wang
Keywords(s):  
Category(s): Physical Science, Semiconductors, Materials & Processes, Energy & Power, Applied Technologies
KV-Class and Low RON Vertical β-Ga2O3 HEMT-CAVET Power Switch
Background Beta-gallium oxide (β-Ga2O3) has become a promising candidate for high-power, high-voltage, and high-frequency applications due to its ultrawide bandgap (-4.8 eV), high critical electric field (-8 MV/cm), and large Baliga’s figure of merit. Compared with lateral devices such as high electron mobility transistors (HEMTs), vertical...
Published: 2/13/2025   |   Inventor(s): Houqiang Fu, Dawei Wang, Dinusha Herath Mudiyanselage
Keywords(s):  
Category(s): Energy & Power, Physical Science, Applied Technologies, Semiconductors, Materials & Processes