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Fabrication Method for Hexagonal Boron Nitride Layers
Computer memory devices may employ any of various mechanisms for storing data, e.g., using memory cells each of which may be programmed to be in any of two or more states. Non-volatile memory includes memory cells each of which operates by changing the resistance across an active switching layer, e.g., an insulator, through the formation of conductive...
Published: 1/3/2025   |   Inventor(s): Ivan Sanchez Esqueda, Jing Xie, Robert Nemanich, Ali Yekta
Keywords(s): Electronics, Fabrication, Materials and Electronics, Memory, Nanofabrication, Nanostructure, PS-Advanced Materials and Nanotechnology, Resistive Memory
Category(s): Advanced Materials/Nanotechnology, Physical Science, Semiconductors, Materials & Processes
Doped Diamond Growth Using a Solid-State Diffusion Source
Diamond is a wide bandgap material with superior electric properties that has been studied in recent years for use in high power and high frequency electronics applications. Doping of the diamond material is necessary for effective control of defect formation, and is typically achieved by incorporating the dopant (e.g., phosphorous, boron) into the...
Published: 12/23/2024   |   Inventor(s): Franz Koeck, Robert Nemanich
Keywords(s): Diffusion, Electronics, Materials and Electronics, Power Electronics, PS-Semiconductors, Materials, Processes
Category(s): Semiconductors, Materials & Processes, Physical Science
Optical Fiber Reactor for Gas Treatment of Nitrogen-Oxide
Background Nitrogen oxides (NOx) as well as nitrous oxide (N2O) have been identified as pollutants of concern in the semiconductor manufacturing industry. While there has been successful implementation of abatement systems to control the emissions of nitrogen oxides, some facilities require further removal to comply with new regulations and meet sustainability...
Published: 12/16/2024   |   Inventor(s): Pierre Herckes, Paul Westerhoff, Matthew Fraser
Keywords(s):  
Category(s): Physical Science, Semiconductors, Materials & Processes, Energy & Power, Environmental
Difunctional, Thermally Stable Monomer Capable of Polymer Incorporation and Photocleavage
Background Recent innovations in semiconductor technology require a range of novel materials capable of supporting technically challenging patterning processes. These materials must meet diverse thermomechanical and optical requirements needed for multi-step fabrication processes. These properties include thermal expansion coefficients, thermal stability,...
Published: 12/10/2024   |   Inventor(s): Jose Sintas, Timothy Long
Keywords(s):  
Category(s): Semiconductors, Materials & Processes, Physical Science, Advanced Materials/Nanotechnology
Multi-Kilovolt AIN Power Diodes on Free-Standing Substrates
Background Aluminum nitride (AlN) is a promising ultra-wide bandgap (UWBG) semiconductor for next-generation power electronics due to its remarkable material attributes, including the largest bandgap in the UWBG semiconductor family, high breakdown field, and superior thermal conductivity. In recent years, AlN Schottky barrier diodes (SBDs) have already...
Published: 10/3/2024   |   Inventor(s): Houqiang Fu, Dinusha Herath Mudiyanselage, Dawei Wang
Keywords(s):  
Category(s): Energy & Power, Physical Science, Semiconductors, Materials & Processes
Low-Temperature Welding of Copper Nanoporous Powders for High Surface Area Electrodes
Background Nanoporous metals, especially copper, are critical in fields like hydrogen production, battery technology, and energy storage due to their high surface area and conductivity. However, traditional sintering methods require high temperatures, which often reduce porosity and compromise performance. Additionally, the mechanical instability of...
Published: 9/26/2024   |   Inventor(s): Stanislau Niauzorau, Natalya Kublik, Emmanuel Dasinor, Amm Hasib, Aliaksandr Sharstniou, Bruno Azeredo
Keywords(s):  
Category(s): Physical Science, Energy & Power, Semiconductors, Materials & Processes, Advanced Materials/Nanotechnology
Nano-Sized Boron-Doped Diamond-Enabled Electrodes for Water Treatment and Chemical Sensing
Background Electrochemical sensing is a compact process used to detect chemicals in aqueous solutions (e.g., water, bodily fluids, foods). It can also be used to treat pollutants in drinking and industrial wastewaters. Electrochemical oxidation can generate hydroxyl radicals, which are effective in degrading organic contaminants in water, including...
Published: 11/6/2024   |   Inventor(s): Paul Westerhoff, Sergi Garcia-Segura, Shahnawaz Sinha, Rishabh Bansal, Rafael Verduzco, Michael Wong
Keywords(s): Environmental
Category(s): Physical Science, Energy & Power, Advanced Materials/Nanotechnology, Semiconductors, Materials & Processes
Open-Air Plasma Removal of Lithium Carbonate for High Performance Solid-State Electrolytes
Background Open-air plasma technology provides a versatile, tunable heat source for processing various materials, including those used in lithium-ion batteries. It enables rapid, controlled transformation, offering an advantage over traditional RF or microwave plasmas. One critical application for open-air plasma technology is in solid-state batteries,...
Published: 9/5/2024   |   Inventor(s): Nicholas Rolston, Candace Chan, Mohammed Sahal, Jinzhao Guo
Keywords(s):  
Category(s): Physical Science, Energy & Power, Semiconductors, Materials & Processes, Advanced Materials/Nanotechnology
β-Ga₂O₃ in the Construction of NiO/β-Ga₂O₃ p-n Diodes
Background Silicon (Si) is the most widely used semiconductor for many reasons including its abundance, cost-effectiveness, and excellent electrical properties. However, its lower breakdown voltage and thermal limitations make it less suitable for high-power, high- frequency and high-temperature applications. The uniformity in silicon's crystal...
Published: 6/24/2024   |   Inventor(s): Houqiang Fu, Dinusha Herath Mudiyanselage, Dawei Wang
Keywords(s):  
Category(s): Physical Science, Semiconductors, Materials & Processes, Energy & Power, Applied Technologies
KV-Class and Low RON Vertical β-Ga2O3 HEMT-CAVET Power Switch
Background Beta-gallium oxide (β-Ga2O3) has become a promising candidate for high-power, high-voltage, and high-frequency applications due to its ultrawide bandgap (-4.8 eV), high critical electric field (-8 MV/cm), and large Baliga’s figure of merit. Compared with lateral devices such as high electron mobility transistors (HEMTs), vertical...
Published: 6/24/2024   |   Inventor(s): Houqiang Fu, Dawei Wang, Dinusha Herath Mudiyanselage
Keywords(s):  
Category(s): Energy & Power, Physical Science, Applied Technologies, Semiconductors, Materials & Processes
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