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Fabrication Method for Hexagonal Boron Nitride Layers
Computer memory devices may employ any of various mechanisms for storing data, e.g., using memory cells each of which may be programmed to be in any of two or more states. Non-volatile memory includes memory cells each of which operates by changing the resistance across an active switching layer, e.g., an insulator, through the formation of conductive...
Published: 1/3/2025   |   Inventor(s): Ivan Sanchez Esqueda, Jing Xie, Robert Nemanich, Ali Yekta
Keywords(s): Electronics, Fabrication, Materials and Electronics, Memory, Nanofabrication, Nanostructure, PS-Advanced Materials and Nanotechnology, Resistive Memory
Category(s): Advanced Materials/Nanotechnology, Physical Science, Semiconductors, Materials & Processes