Search Results - supriyo+karmakar

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Multiple Drain Metal Oxide Semiconductor Field Effect Transistor (MDMOSFET)
This technology improves semiconductor integration for MOSFET devices, while enabling sub-nanometer semiconductor fabrication. Background: A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of field-effect transistor. MOSFETs can change conductivity with the amount of applied voltage, which makes them useful for amplifying or...
Published: 3/13/2026   |   Inventor(s): Supriyo Karmakar
Keywords(s): Technologies
Category(s): Campus > Farmingdale State College, Technology Classifications > Semiconductor Devices and Manufacturing
Multiple Quantum Well Floating Gate Non-Volatile Memory (MQWFGNVM)
This technology is a novel type of non-volatile memory that can store more than two values in a single cell, significantly increasing the amount of data that can be stored. Background: Conventional floating gate non-volatile memory (FGNVM) can store two values (0 or 1) in a single memory cell. The 0 and 1 represent the presence or absence of charge...
Published: 3/13/2026   |   Inventor(s): Supriyo Karmakar
Keywords(s): electronics, MOSFET, nanotechnology, semiconductors
Category(s): Campus > Farmingdale State College, Technology Classifications > Quantum Computing
Various Architectures of ReRAM
A novel technology that can help realize the promise of ReRAM for use as computer flash memory. Background: Resistive random-access memory (ReRAM) is a form of non-volatile random-access (RAM) computer memory. ReRAM operates by changing the resistance across a dielectric solid-state material. This involves generating defects in a thin oxide layer,...
Published: 1/29/2026   |   Inventor(s): Supriyo Karmakar
Keywords(s): Technologies
Category(s): Campus > Farmingdale State College, Technology Classifications > Computers, Technology Classifications > Electronics, Technology Classifications > Engineering, Technology Classifications > Information Technology
Flash ADC and DAC Using Multiple Quantum Well Floating Gate Non-Volatile Memory (MQWFGNVM)
Enables the design of flash memory components that are smaller, easier to control, more efficient, and simpler to manufacture. Background: Flash memory is a high-speed, electrically programmable memory technology widely used throughout the computer industry. Typically, flash memory includes several different comparators that are designed based on...
Published: 1/30/2026   |   Inventor(s): Supriyo Karmakar
Keywords(s): Technologies
Category(s): Campus > Farmingdale State College, Technology Classifications > Computers, Technology Classifications > Electronics, Technology Classifications > Information Technology, Technology Classifications > Instrumentation
Gate All-Around Field Effect Transistors Including Quantum-Based Features
A device that increases computational processing power in a single Gate All-Around Field Effect Transistor including quantum-based features. Background: A major problem with conventional transistor technology is that conventional MOSFETs are ill equipped to implement multivalued logic. As the number of states a transistor can store increases, the number...
Published: 1/30/2026   |   Inventor(s): Supriyo Karmakar
Keywords(s): #SUNYresearch, Technologies
Category(s): Technology Classifications > Nanotechnology, Campus > Farmingdale State College