This technology improves semiconductor integration for MOSFET devices, while enabling sub-nanometer semiconductor fabrication.
Background: A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of field-effect transistor. MOSFETs can change conductivity with the amount of applied voltage, which makes them useful for amplifying or switching electronic signals. The main advantage of a MOSFET is that it requires almost no input current to control the load current, when compared with bipolar transistors. Their primary use is to control conductivity, or how much electricity can flow, between its source and drain terminals based on the amount of voltage applied to its gate terminal. MOSFETs are by far the most common transistor type in digital circuits, as billions may be included in a memory chip or microprocessor.
Technology Overview: This technology represents an advanced design for a specific type of MOSFET, a multiple drain metal oxide semiconductor field effect transistor (MDMOSFET). This component can be useful for future semiconductor device integration. The MDMOSFET can be used to design multiplexer (MUX), demultiplexer (DEMUX), router, switch, and various other applications. It increases the device integration in a semiconductor chip. This technology covers two configurations of MOSFET in two different semiconductor technologies. Combining multiple drains of different MOSFETs together will increase the device integration. In addition, the proposed architecture in planer and FINFET technology provides the opportunity to design and fabricate them in sub-nm semiconductor technology.
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Advantages: • Improves semiconductor integration for MOSFET devices. • Enables sub-nm semiconductor fabrication.
Applications: The primary application for this technology is the design and manufacture of multiple drain metal oxide semiconductor field effect transistor (MDMOSFET) electronic components.
Know-how based, patents available
Stage of Development: TRL 2
Licensing Status: This technology is available for licensing.