Inteum Company
Links
seedsprint
Visible Legacy
RSS
News & Resources
Inteum Company News
Inteum Library
Subscribe
Gate All-Around Field Effect Transistors Including Quantum-Based Features
Case ID:
390-2055
Web Published:
7/11/2023
A device that increases computational processing power in a single Gate All-Around Field Effect Transistor including quantum-based features. Background: A major problem with conventional transistor technology is that conventional MOSFETs are ill equipped to implement multivalued logic. As the number of states a transistor can store increases, the number of transistors required on a chip decrease. Thus, with binary transistors, more transistors are needed to carry out a given number of logic functions. A related problem with conventional transistor technology is that as transistor size continues to shrink, charge leakage becomes more prominent and noise margin becomes less uniform. In non-volatile memory charge leakage will, over time, result in destruction of the information stored in a memory cell. https://suny.technologypublisher.com/files/sites/390-2055umberto-jxd2fsvcrr8-unsplash.jpg
Technology Overview: The device developed by SUNY Farmingdale State College researchers contains Circular Multi-channel (e.g., three-state, four-state) Gate All-Around Field Effect Transistors (GAAFET) which utilize quantum-based features or layers therein to increase computational processing during operation. Examples, of the quantum-based features included in the GAAFET include a plurality of quantum dots (QD) or quantum well channels. The quantum-based features are arranged in the GAAFET in a circumferential layer(s) that surrounds a nanowire and is/are disposed below a gate contact. Intervening layers may also be provided within the GAAFET to increase/improve electrical stability for the quantum-based features. Stage of Development:
Stage of Development Technology Readiness Level (TRL): 2 Advantages: • Generates 4,5, or 6 states, as opposed to 2 conventional FET
• Device easily fabricated using conventional CMOS technology
• Circuit architecture very similar to CMOS binary circuits
• Device model and circuit model are compatible
• Larger, denser memory in a single transistor for greater processing power
• Increases in device integration, speed, efficiency, and cost savings
Applications: • Computer Science
• Conventional Semiconductor Manufacturing Process
• Advanced Computational Logic
• Multi-State Storage
• Large Scientific and Research Instruments
• Custom Computational Logic Devices
Intellectual Property Summary: Patented,
US 11,799,035
Licensing Potential: Licensing, Development partner Licensing Status: This technoloy is available for licensing
Patent Information:
Title
App Type
Country
Serial No.
Patent No.
File Date
Issued Date
Expire Date
Direct Link:
https://canberra-ip.technologypublisher.com/tech/Gate_All-Around_Field_Effect _Transistors_Including_Quantum-Based_Features
Keywords:
#SUNYresearch
Technologies
Bookmark this page
Download as PDF
For Information, Contact:
Karl-Heinz Schofalvi
The Research Foundation for The State University of New York
Karl-Heinz.Schofalvi@rfsuny.org