Double-quantum-well infrared photodetectors (DQWIPs) integrated with nanophotonic cavities enable highly responsive mid-infrared detection through enhanced intersubband absorption in the thin semiconductor heterostructure. Additionally, the technology is compatible with flexible substrates.
Background:
Quantum Well Infrared Photodetectors (QWIPs) are sensitive photodetectors for the mid-to-long-wave infrared spectrum (3-20 µm) that are often used in applications such as remote sensing, imaging, and optical communications. In recent years, QWIP technologies have undergone substantial development, with the most recent introduction of single-quantum-well infrared photodetectors (SQWIP). While SQWIPs exhibit increased responsivity and detectability compared to earlier QWIPs, the structure of SQWIP devices can result in a degradation of photocurrent, decreasing responsivity. This technology provides a novel Quantum Well Infrared Photodetector, which utilizes two quantum wells, resulting in state-of-the-art responsivity performance with the capacity to be implemented on flexible substrates.
Technology Overview:
This University at Buffalo technology features a novel Double Quantum Well Infrared Photodetector, which exhibits state-of-the-art detector responsivity performance, substantially improving upon earlier QWIP technologies, including SQWIP. Additionally, our DQWIP technology is sufficiently thin such that it can be used on flexible substrates, opening up a wide variety of novel applications.
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Advantages:
Applications:
Intellectual Property Summary:
United States Provisional Patent Application 63/817,238 filed June 3rd, 2025.
Stage of Development:
Licensing Status:
Available for licensing or collaboration.