Search Results - thermal+transistor

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Programmable Micro-Mirrors for Real-Time Emissivity Control and Switching (Case No. 2025-254)
Summary: UCLA researchers in the Department of Mechanical and Aerospace Engineering have developed a fast-switching, MEMS-based thermal metasurface that enables real-time infrared emissivity modulation via high-contrast, broadband radiative control. Background: Dynamic emissive thermal devices offer active control over infrared (IR) radiation....
Published: 2/25/2026   |   Updated: 8/20/2025   |   Inventor(s): Artur Davoyan, Mozakkar Hossain, Pavel Shafirin, Hanseong Jo, Tom Joly-Jehenne
Keywords(s): advanced thermal control materials, compact IR shielding, Dynamic thermal emissivity, EV battery cooling, Fluid Dynamics, heat control, heat controlling devices, Heat Transfer, infrared modulation, infrared signature suppression, IR camouflage, MEMS, MEMS metasurface, micro-electromechanical systems (MEMS), rapid emissivity modulation, real-time thermal management, stealth, thermal circuit, thermal conductance, thermal control, thermal control materials, Thermal Energy Storage, thermal metamaterials, thermal stability, thermal transistor, tunable radiative properties
Category(s): Electrical, Electrical > Electronics & Semiconductors
HFSIO as Gate Insulator for N-Polar Gan HEMTs (Case No. 2024-268)
Summary: Researchers in the UCLA Department of Electrical and Computer Engineering have developed a new, high-performance transistor for high-frequency and high-power systems. Background: Gallium nitride (GaN) high electron mobility transistors (HEMTs) are critical for high-frequency and high-power electrical applications due to their superior material...
Published: 6/12/2025   |   Updated: 1/3/2025   |   Inventor(s): Elaheh Ahmadi, Oguz Odabasi, Xin Zhai
Keywords(s): atomic layer deposition, dielectric gates, field-effect transistors (FETs), gallium nitride, GaN, G-polar GAN, hafnium silicon oxide, HfSiO, high dielectric constant materials, high electron mobility transistors, high electron mobility transistors (HEMTs), high frequency electronics, high power electronics, N-polar GAN, organic field effect transistors, quality control manufacturing, scalable manufacturing, solid-state thermal transistor, strength-thermal stability, thermal stability, thermal transistor, Thin-Film Transistor, Transistor, transistors
Category(s): Chemical, Chemical > Chemical Processing & Manufacturing, Electrical, Electrical > Electronics & Semiconductors, Materials, Materials > Semiconducting Materials, Materials > Metals