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HFSIO as Gate Insulator for N-Polar Gan HEMTs (Case No. 2024-268)
Summary: Researchers in the UCLA Department of Electrical and Computer Engineering have developed a new, high-performance transistor for high-frequency and high-power systems. Background: Gallium nitride (GaN) high electron mobility transistors (HEMTs) are critical for high-frequency and high-power electrical applications due to their superior material...
Published: 1/3/2025   |   Inventor(s): Elaheh Ahmadi, Oguz Odabasi, Xin Zhai
Keywords(s): atomic layer deposition, dielectric gates, field-effect transistors (FETs), gallium nitride, GaN, G-polar GAN, hafnium silicon oxide, HfSiO, high dielectric constant materials, high electron mobility transistors, high electron mobility transistors (HEMTs), high frequency electronics, high power electronics, N-polar GAN, organic field effect transistors, quality control manufacturing, scalable manufacturing, solid-state thermal transistor, strength-thermal stability, thermal stability, thermal transistor, Thin-Film Transistor, Transistor, transistors
Category(s): Chemical, Chemical > Chemical Processing & Manufacturing, Electrical, Electrical > Electronics & Semiconductors, Materials, Materials > Semiconducting Materials, Materials > Metals