Search Results - john+kouvetakis

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Low Temperature Epitaxial Growth of Quaternary Wide Bandgap Semiconductors
The advent of epitaxial techniques for growing thin films has allowed for the growth of unnatural, metastable structures having properties previously unattainable in equilibrium systems. Specifically, quaternary compounds are of great interest for microelectronic and optoelectronic devices due to expectations that these materials will exhibit...
Published: 2/23/2023   |   Inventor(s): John Kouvetakis, Ignatius Tsong, Radek Roucka, John Tolle
Keywords(s): Materials
Category(s): Physical Science, Semiconductors, Materials & Processes
Selective Deposition of Ge-rich Si-Ge Layers from Single Source Si-Ge Hydrides
Employing selective epitaxy to grow fully strained Si-Ge alloys in the source and drain (S/D) of a p-type metal-oxide semiconductor (PMOS) transistor compresses the Si-channel to significantly increase the hole mobility, and consequently, the speed of the device. Ge-rich alloys, where Ge constitutes = 50% of the alloy, are of particular interest...
Published: 2/23/2023   |   Inventor(s): John Kouvetakis, Yan-Yan Fang
Keywords(s): Electronics
Category(s): Physical Science, Semiconductors, Materials & Processes
Synthesis of Amorphous Si3N4-xPx Dielectrics
Alternatives to silicon dioxide and silicon nitride, the traditional dielectric and passivation materials in semiconductor devices, have been the subject of intense research for the past two decades. Alloy compounds whose properties can be tuned via compositional adjustments are of particular interest. These include materials such as silicon...
Published: 2/23/2023   |   Inventor(s): John Kouvetakis
Keywords(s):  
Category(s): Physical Science, Semiconductor Devices, Semiconductors, Materials & Processes
Materials and Optical Devices Based on Group IV Quantum Wells Grown on Si-Ge-Sn Buffered Silicon
The ability to manufacture high quality Sn-Ge and Si-Ge-Sn alloys has significant industry value for various reasons; however, existing techniques have failed to produce sufficiently high quality alloys to allow for effective use of these alloys in device applications. Specifically, the ability of Sn-Ge alloys to transition from indirect- to direct-gap...
Published: 2/23/2023   |   Inventor(s): John Kouvetakis, Jose Menendez, John Tolle
Keywords(s): Optoelectronics
Category(s): Physical Science, Semiconductor Devices