This technology introduces a high-power Class AB monolithic microwave integrated circuit (MMIC) power amplifier designed for X-band radar and advanced communication systems. It is based on Gallium Nitride (GaN) on Silicon Carbide (SiC) technology, which provides high breakdown voltage and excellent thermal conductivity. This design improves load modulation, resulting in better power efficiency and higher power output across a wide range of operating conditions.
Background: The field of high-power microwave amplification, particularly for X-band (8–12 GHz) applications, is critical for advanced radar, satellite communications, and military systems. These systems demand amplifiers that can deliver substantial output power while maintaining high efficiency and linearity, as performance directly impacts the resolution, range, and reliability of radar and communication links. The proliferation of high-resolution radar imaging, weather monitoring, and defense applications has intensified the need for robust, compact, and energy-efficient microwave amplifiers. As operational requirements grow more stringent, the ability to dynamically adjust output power and efficiency in real time becomes increasingly important for adapting to varying signal conditions and minimizing energy consumption. Current approaches to high-power MMIC amplifiers face significant limitations. Traditional amplifier designs often struggle to achieve the necessary balance between output power, efficiency, and linearity, especially at high frequencies like the X-band. Techniques such as complementary push-pull configurations and digital predistortion (DPD) are commonly employed to improve performance, but these methods add complexity, increase circuit size, and can introduce additional losses or stability issues. Furthermore, many existing technologies are constrained by the thermal and voltage handling capabilities of their semiconductor materials, limiting their suitability for high-power, high-frequency applications. As a result, there remains a pressing need for amplifier solutions that can provide high output power, superior efficiency, and operational stability without the drawbacks of increased circuit complexity or compromised reliability.
Technology Overview: The technology is a phase-controlled, high-power Class AB monolithic microwave integrated circuit (MMIC) amplifier engineered for X-band applications (8–12 GHz), such as radar and advanced communications. Utilizing Wolfspeed’s Gallium Nitride (GaN) 28V V5 process on semi-insulating silicon carbide (SiC) wafers, it leverages the superior properties of GaN-on-SiC for high voltage operation, exceptional thermal management, and high power density. This solution is differentiated by its integration of advanced GaN-on-SiC MMIC technology with a unique phase-control approach, addressing the longstanding challenge of simultaneously achieving high output power, efficiency, and linearity in X-band amplifiers. Traditional high-frequency amplifiers often struggle to balance these parameters, frequently requiring complex circuit topologies or digital predistortion techniques. By enabling dynamic phase-based control of output power, this amplifier offers a streamlined and highly efficient alternative, reducing circuit complexity while optimizing performance for demanding applications like radar, high-resolution imaging, and military/aerospace systems. When built into a compact MMIC, this approach reduces the usual trade-offs between efficiency, signal accuracy, and bandwidth. It also simplifies overall system design while maintaining consistent, high-quality performance across the X-band. Its high power density, efficiency, and stability make it particularly well-suited for next-generation X-band systems, setting it apart from conventional MMIC amplifier designs.
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Advantages: • High output power of 64 watts at X-band frequencies (8–12 GHz) • Improved power-added efficiency (54.5% per amplifier branch) • Dynamic control of output power and efficiency via phase modulation • Enhanced thermal management and high power density using GaN-on-SiC technology • Stable and efficient operation under varying load conditions • High large-signal gain (21.3 dB) suitable for radar and communication systems • Compact monolithic microwave integrated circuit (MMIC) design for integration • Optimized for demanding applications such as X-band radar, high-resolution imaging, and aerospace
Applications: • X-band radar systems • High-resolution imaging radar • Weather monitoring radar • Military/aerospace communication • Satellite communication uplinks
Intellectual Property Summary: Patent Pending
Stage of Development: TRL 4
Licensing Status: This technology is available for licensing.