Ferroelectric Diode Arrays for Reconfigurable In-Memory Computing

Field-programmable ferroelectric diode arrays enable nonvolatile storage, search, and neural-network operations using transistor-free memory and synapse architectures.
Tech Title: Technology:
Technology:  The system includes arrays of ferroelectric diodes formed atop semiconductor structures such as CMOS wafers. Memory arrays can use a V/2 scheme for readout and programming. TCAM cells can use two oppositely polarized diodes in 0T-2R structures. Neural-network implementations use multi-bit diode synapses with multiple conductive states programmed by electrical pulses.
Problem Title:  Problem:
Problem: Data-intensive computing can require separate architectures for storage, search, and matrix multiplication. Integrating these functions on one chip has been challenging. Conventional in-memory computing designs can add device overhead and complicate compact implementation.
Solution Title:  Solution:
Solution:  The technology uses field-programmable ferroelectric diodes built from materials such as doped aluminum nitride or hafnium zirconium oxide. These diodes are non-volatile and can be pulsed to pulse-number-dependent analog states. The architecture supports transistor-free memory cells, TCAM cells, and multi-bit diode synapses for reconfigurable in-memory computing.
Advantages:

  • Supports nonvolatile operation with field programmability through electrical pulsing.
  • Enables transistor-free cell architecture for storage and search.
  • Can be implemented using ferroelectric diode materials including doped aluminum nitride or hafnium zirconium oxide.
  • Supports multiple conductive states for synaptic operation in neural-network arrays.
  • Compatible with CMOS back-end-of-line (BEOL) processing.

Applications:

  • Nonvolatile Memory: Provides field-programmable memory cells using ferroelectric diode arrays.
  • Search Hardware: Implements TCAM cells using two oppositely polarized diodes in 0T-2R structures.
  • Neural Networks: Uses multi-bit diode synapses for array-based neural-network computation.
  • Reconfigurable Computing: Supports storage, search, and neural-network functions within reconfigurable in-memory-computing architectures. 




Intellectual Property:

Reference Media:

Docket #21-9624

Patent Information: