Field-programmable ferroelectric diode arrays enable nonvolatile storage, search, and neural-network operations using transistor-free memory and synapse architectures. Tech Title: Technology: Technology: The system includes arrays of ferroelectric diodes formed atop semiconductor structures such as CMOS wafers. Memory arrays can use a V/2 scheme for readout and programming. TCAM cells can use two oppositely polarized diodes in 0T-2R structures. Neural-network implementations use multi-bit diode synapses with multiple conductive states programmed by electrical pulses. Problem Title: Problem: Problem: Data-intensive computing can require separate architectures for storage, search, and matrix multiplication. Integrating these functions on one chip has been challenging. Conventional in-memory computing designs can add device overhead and complicate compact implementation. Solution Title: Solution: Solution: The technology uses field-programmable ferroelectric diodes built from materials such as doped aluminum nitride or hafnium zirconium oxide. These diodes are non-volatile and can be pulsed to pulse-number-dependent analog states. The architecture supports transistor-free memory cells, TCAM cells, and multi-bit diode synapses for reconfigurable in-memory computing. Advantages:
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Docket #21-9624