Our researchers have developed a SiC device that provides a complete neural interface with bi-directional signaling. This device is of flexible nature, which makes it an excellent candidate for brain implantation. Due to the composition and structure of the device, it can be implanted into the soft tissue of the brain as well as sitting on the perimeter of the brain beneath the scalp. The low-cost process of manufacturing this device is by low-temperature deposition and laser dopant activation, which allows stacking of flexible, thin-layered SiC. This process can produce both surface and implantable electrodes. This device allows for long-term implantation that will be highly beneficial to people suffering from head injury, dementia, Alzheimer’s disease, Parkinson’s disease, and other neural damage.
Animated Depiction of Neural Synapses in the Brain, Which is What the Neural Interface Device Artificially Performs