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Engineered ferroelectric gate devices
PAGE TITLE Overview PAGE SUMMARY Coupling of switchable ferroelectric polarization with the carrier transport in an adjacent semiconductor enables a robust, non-volatile manipulation of the conductance in a host of low-dimensional systems, including the two-dimensional electron liquid that forms at the LaAlO3-SrTiO3 interface. However, the strength...
Published: 2/20/2025   |   Inventor(s): Jonathan Spanier, Zongquan Gu, Mohammad Islam
Keywords(s):  
Category(s): Electrical Engineering, Electronics, Advanced Materials & Chemicals