PAGE TITLE
Overview
PAGE SUMMARY
Coupling of switchable ferroelectric polarization with the carrier transport in an adjacent semiconductor enables a robust, non-volatile manipulation of the conductance in a host of low-dimensional systems, including the two-dimensional electron liquid that forms at the LaAlO3-SrTiO3 interface. However, the strength of the gate-channel coupling is relatively weak, limited in part by the electrostatic potential difference across a ferroelectric gate. Compositionally grading of PbZr1-xTixO3 ferroelectric gates enables a more than twenty-fivefold increase in the LAO/STO channel conductance on/off ratios. Incorporation of polarization gradients in ferroelectric gates can enable significantly enhanced performance of ferroelectric non-volatile memories.
IP STATUS
Intellectual Property and Development Status
United States Issued- 9,899,516
https://patents.google.com/patent/US9899516B2/en?oq=9%2c899%2c516
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