Search Results - nidhin+kurian+kalarickal

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Gallium Oxide Trench Junction Barrier Schottky Diodes
Invention Description High-voltage power electronic devices require materials and designs that can handle large electric fields while maintaining low power loss and high efficiency. Traditional diode structures often face trade-offs between breakdown voltage, leakage current, and on-resistance, limiting their performance in demanding applications....
Published: 4/15/2026   |   Updated: 4/15/2026   |   Inventor(s): Nidhin Kurian Kalarickal, Advait Gilankar
Keywords(s):  
Category(s): Advanced Materials/Nanotechnology, Energy & Power, Microelectronics, Physical Science, Semiconductors, Materials & Processes
Method for In-Situ Etching of Ga2O3 using Metal Organic Ga Precursors
Background Gallium oxide (Ga2O3) is an ultra-wide band gap semiconductor that has potential to be useful in power switching and high-frequency power amplifying devices. However, all current dry etching recipes in Ga2O3 have been found to cause significant subsurface damage, resulting in charge depletion. Additionally, wet etching recipes for Ga2O3...
Published: 2/26/2026   |   Updated: 3/20/2024   |   Inventor(s): Nidhin Kurian Kalarickal
Keywords(s):  
Category(s): Semiconductors, Materials & Processes, Physical Science, Bioanalytical Assays, Chemistries & Devices, Advanced Materials/Nanotechnology, Energy & Power