Search Results - kang+wang

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Ultra-Sensitive Solid-State Magnetic Field Sensors based on Anomalous Hall Effect
Overview Magnetic sensors are widely used in industry, for example, in automotive applications, information storage, metrology, medical devices, and IoT sensors. Our novel high-performing magnetic sensors have both ultra-detectability and high stability, and are inexpensive to manufacture. They also have low intrinsic noise, high temperature stability,...
Published: 6/7/2024   |   Inventor(s): Gang Xiao, Kang Wang, Yiou Zhang
Keywords(s):  
Category(s): Hardware, Sensors
2006-385 Methods to Efficiently Interconnect Nanoscale Computational Components with Spin-Waves
Summary UCLA Researchers in the Department of Electrical Engineering have developed designs for interconnecting large sets of nanoscale computational units on a chip utilizing a newly developed technology, Spin-Wave buses. Background Design of nanoscale architectures for computing is a very new area, but an important one as fundamental limits in scaling...
Published: 7/19/2023   |   Inventor(s): Mary Eshaghian-Wilner, Kang Wang, Alexander Khitun
Keywords(s):  
Category(s): Electrical > Electronics & Semiconductors
2014-322 MAGNETIC MEMORY BITS WITH PERPENDICULAR MAGNETIZATION SWITCHED BY CURRENT-INDUCED SPIN-ORBIT TORQUES
Magnetic Memory Bits with Perpendicular Magnetization Switched By Current-Induced Spin-Orbit TorquesTech ID: 30203 / UC Case 2014-322-0SUMMARYUCLA researchers in the Department of Electrical and Computer Engineering have developed a novel spin-orbit-torque (SOT)-controlled magnetic random access memory driven by in-plane currents.BACKGROUNDMagnetization...
Published: 7/19/2023   |   Inventor(s): Kang Wang
Keywords(s): Electronics & Semiconductors, Memory
Category(s): Electrical > Electronics & Semiconductors, Electrical > Electronics & Semiconductors > Memory
2014-141 METHODS AND SYSTEMS FOR MAGNETOELECTRONIC ELEMENTS AND ARRAYS
Case No. 2014-141SUMMARYUCLA researchers in the Department of Electrical Engineering have developed a magnetoelectric memory array, which uses a crossbar architecture to achieve high density.BACKGROUNDExcessive power consumption and manufacturing costs have become chief roadblocks to the further scaling of semiconductors, electronics and systems that...
Published: 7/19/2023   |   Inventor(s): Kang Wang, Pedram Khalili Amiri
Keywords(s): Electronics & Semiconductors, Memory, Semiconductors
Category(s): Electrical > Electronics & Semiconductors, Electrical > Electronics & Semiconductors > Circuits, Electrical > Electronics & Semiconductors > Memory
2014-140 MAGNETOELECTRIC DEVICE HAVING TWO DIELECTRIC BARRIERS
Magnetoelectric Device with Two Dielectric BarriersTech ID: 30169 / UC Case 2014-140-0SUMMARYUCLA researchers in the Department of Electrical and Computer Engineering have developed a magnetoelectric memory device that uses two dielectric barriers for improved voltage-controlled magnetic anisotropy (VCMA) and tunnel magnetoresistance (TMR) properties.BACKGROUNDNew...
Published: 7/19/2023   |   Inventor(s): Kang Wang, Pedram Khalili Amiri
Keywords(s): Electronics & Semiconductors, Memory
Category(s): Electrical > Electronics & Semiconductors, Electrical > Electronics & Semiconductors > Circuits, Electrical > Electronics & Semiconductors > Memory
2012-876 A READ-DISTURBANCE-FREE NONVOLATILE CONTENT ADRESSABLE MEMORY
Case No. 2012-876SUMMARYUCLA researchers in the Department of Electrical Engineering have developed read-disturbance-free content addressable memory (CAM) using voltage controlled magneto-electric tunnel junctions (MEJs).BACKGROUNDThe electronics industry continuously demands for memory devices with higher density, faster speed, and better reliability....
Published: 7/19/2023   |   Inventor(s): Kang Wang, Pedram Khalili Amiri, Dejan Markovic, Richard Dorrance
Keywords(s): Electronics & Semiconductors, Memory
Category(s): Electrical > Electronics & Semiconductors, Electrical > Electronics & Semiconductors > Circuits, Electrical > Electronics & Semiconductors > Memory
2012-875 A NONVOLATILE MAGNETOELECTRIC RANDOM ACCESS MEMORY CIRCUIT
Case No. 2012-875SUMMARYUCLA researchers in the Department of Electrical Engineering have developed a nonvolatile random-access memory circuit (MeRAM) that is very dense, fast, and consumes extremely low power.BACKGROUNDRandom-access memory (RAM) is a form of computer data storage that directly affects a computer’s speed. As society becomes heavily...
Published: 7/19/2023   |   Inventor(s): Kang Wang, Dejan Markovic, Pedram Khalili Amiri, Richard Dorrance
Keywords(s): Electronics & Semiconductors, Memory
Category(s): Electrical > Electronics & Semiconductors, Electrical > Electronics & Semiconductors > Circuits, Electrical > Electronics & Semiconductors > Memory
2015-493 Periodically Rippled Antenna
Periodically Rippled AntennaSUMMARYUCLA researchers in the Department of Electrical Engineering have designed a periodically-rippled microstrip patch antenna for wireless communication systems.BACKGROUNDAdvancements in communication engineering and integration technology demand size reduction of low frequency antennas. Multiband operation and miniaturization...
Published: 7/19/2023   |   Inventor(s): Mohsen Yazdani, Aryan Navabi-Shirazi, Pedram Khalili Amiri, Kang Wang
Keywords(s): Antennas/Wireless, Electronics & Semiconductors
Category(s): Electrical > Electronics & Semiconductors, Materials > Semiconducting Materials, Materials > Fabrication Technologies, Electrical > Wireless
2016-211 Graphene-polymer nanocomposite incorporating chemically doped graphene-polymer heterostructure for flexible and transparent conducting films
Graphene-Polymer Nanocomposite Incorporating Chemically Doped Graphene-Polymer Heterostructure for Flexible and Transparent Conductive FilmsSUMMARYUCLA researchers in the Department of Electrical Engineering have invented a novel graphene-polymer nanocomposite material for flexible transparent conductive electrode (TCE) applications.BACKGROUNDTransparent...
Published: 7/19/2023   |   Inventor(s): Chandan Biswas, Kang Wang
Keywords(s): Displays, Electronics & Semiconductors, Energy & Water
Category(s): Electrical > Electronics & Semiconductors, Materials > Semiconducting Materials, Energy & Environment > Energy Generation > Solar, Materials > Fabrication Technologies, Electrical > Displays
2017-456 Anti-Ferromagnetic Magneto-Electric Spin-Orbit Read Logic
Anti-Ferromagnetic Magneto-Electric Spin-Orbit Read LogicSUMMARYUCLA researchers in the department of Electrical Engineering have developed a novel magetoelectric device for use as a spin transistor.BACKGROUNDThe search for a novel and scalable logic technology could revolutionize the non-volatile memory market, which will be worth over $80 billion...
Published: 7/19/2023   |   Inventor(s): Kang Wang, Christian Binek, Dmitri Nikonov, Jonathan Bird, Peter Dowben, Xia Hong
Keywords(s): Electronics & Semiconductors
Category(s): Electrical > Electronics & Semiconductors, Materials > Semiconducting Materials, Electrical > Electronics & Semiconductors > Circuits
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