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Nonvolatile memory devices fabricated at a complementary metal–oxide–semiconductor (CMOS)-compatible temperature
High-performance nonvolatile memory devices integrated with ferroelectric Aluminum Scandium Nitride (AlScN) films that can be directly deposited on the silicon at low temperature (≤ 350 °C) Problem: Strong demand for high-density non-volatile memory (NVM) devices with low power consumption is being driven by new applications of non-von Neumann...
Published: 1/24/2024   |   Inventor(s): Deep Jariwala, Roy Olsson, Eric Stach, Xiwen Liu
Keywords(s): Artificial Intelligence (AI) & Machine Learning, Internet of Things
Category(s): Technology Classifications > Materials, Technology Classifications > Hardware & Components