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FeFET Memory Device for BEOL Silicon Integration
A ferroelectric transistor memory device combines AlScN dielectric with a 2D semiconductor channel such as MoS2 for non-volatile memory compatible with CMOS back-end of line (BEOL) fabrication. Tech Title: Technology: Technology: The device includes an AlScN portion in electronic communication with a semiconducting channel portion comprising a 2D material....
Published: 6/5/2026   |   Updated: 5/29/2026   |   Inventor(s): Deep Jariwala, Kwan-Ho Kim, Xiwen Liu, Roy Olsson, Eric Stach
Keywords(s): Artificial Intelligence (AI) & Machine Learning, Electronic Materials, Internet of Things
Category(s): Technology Classifications > Hardware & Components, Technology Classifications > Imaging