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Search Results - dong+yu
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Ga₂O₃ Vertical MOSFET for Enhanced Power Management
A vertical trench MOSFET using a unique in-situ Mg-doped current blocking layer to enable high-voltage operation with enhanced efficiency and robustness in power electronic devices. Background: This technology addresses the need for high-voltage power devices suitable for grid and traction applications, overcoming the limitations of traditional silicon-based...
Published: 1/3/2025
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Inventor(s):
Uttam Singisetti
,
Hongping Zhao
,
Sudipto Saha
,
Lingyu Meng
,
Dong Yu
Keywords(s):
Featured
,
Semiconductor and Microprocessing
,
Technologies
Category(s):
Campus > University at Buffalo
,
Technology Classifications > Energy
,
Technology Classifications > Electronics