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Non-Volatile Latch Using Magneto-Electric and Ferro-Electric Tunnel Junctions
A non-volatile memory circuit includes an SRAM cell with magnetoelectric or ferroelectric structures for maintaining data within the SRAM cell even with power off in some implementations. Two memory structures under development in the Nanoelectronics Research Initiative (NRI) of the Semiconductor Research Corporation (SRC) show promise for low...
Published: 3/21/2024   |   Inventor(s): Jonathan Bird, Uttam Singisetti, Andrew Marshall
Keywords(s): Technologies
Category(s): Technology Classifications > Electronics, Technology Classifications > Engineering, Campus > University at Buffalo