Search Results - uttam+singisetti

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Ga₂O₃ Vertical MOSFET for Enhanced Power Management
A vertical trench MOSFET using a unique in-situ Mg-doped current blocking layer to enable high-voltage operation with enhanced efficiency and robustness in power electronic devices. Background: This technology addresses the need for high-voltage power devices suitable for grid and traction applications, overcoming the limitations of traditional silicon-based...
Published: 1/3/2025   |   Inventor(s): Uttam Singisetti, Hongping Zhao, Sudipto Saha, Lingyu Meng, Dong Yu
Keywords(s): Featured, Semiconductor and Microprocessing, Technologies
Category(s): Campus > University at Buffalo, Technology Classifications > Energy, Technology Classifications > Electronics
Non-Volatile Latch Using Magneto-Electric and Ferro-Electric Tunnel Junctions
A non-volatile memory circuit includes an SRAM cell with magnetoelectric or ferroelectric structures for maintaining data within the SRAM cell even with power off in some implementations. Two memory structures under development in the Nanoelectronics Research Initiative (NRI) of the Semiconductor Research Corporation (SRC) show promise for low...
Published: 3/21/2024   |   Inventor(s): Jonathan Bird, Uttam Singisetti, Andrew Marshall
Keywords(s): Technologies
Category(s): Technology Classifications > Electronics, Technology Classifications > Engineering, Campus > University at Buffalo