Search Results - arun+bansil

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Physical security and authentication systems using near-invisible, forgery-resistant quantum signatures.
INV-22047 Background: In a world where forgery and counterfeit of high-value items are rampant, the need for advanced physical security measures is more critical than ever. This challenge spans across various sectors including art, antiques, medicines, aircraft parts, currency, and luxury goods. Traditional physical security tags, while helpful,...
Published: 9/10/2024   |   Inventor(s): Swastik Kar, Arun Bansil, Paul Stevenson
Keywords(s): magnetic nanoparticles, physical security, quantum imaging magnetometer, random number generator, unique identifier
Category(s): Technology Classifications > 2. Physical Science, Technology Classifications > 2. Physical Science > Security, Technology Classifications > 2. Physical Science > Advanced materials/Nanomaterials
Antisite defect qubits in monolayer transition metal dichalcogenides
INV-21027 Background The ongoing second quantum revolution calls for exploiting the laws of quantum mechanics in transformative new technologies for computation and quantum information science (QIS) applications. Spin-qubits based on solid-state defects have emerged as promising candidates because these qubits can be initialized, selectively controlled,...
Published: 9/10/2024   |   Inventor(s): Jeng-Yuan Tsai, Jinbo Pan, Hsin Lin, Arun Bansil, Qimin Yan
Keywords(s): 2D materials, Antisite defect in TMD, Quantum computing, Quantum information technologies, Quantum sensors, Solid-state spin-defect
Category(s): -Sensors, Technology Classifications > 2. Physical Science > Advanced materials/Nanomaterials, Technology Classifications > 2. Physical Science > Electronics/Semiconductors, Technology Classifications > 2. Physical Science > Manufacturing
Tunable and Reconfigurable Atomically Thin Heterostructures
3 layers can form rotationally-aligned stacks with long-range crystallographic order. Our theory predicts and experiments reveal striking electronic and optical changes when Bi2Se3 is stacked layer-by-layer on monolayer MoS2, including the formation of an indirect bandgap and 100% photoluminescence (PL) suppression, tunable transmittance-edge (1.1 eV®0.75...
Published: 9/10/2024   |   Inventor(s): Swastik Kar, Fangze Liu, Christopher Lane, Daniel Rubin, Arun Bansil, Anthony Vargas, Zachariah Hennighausen
Keywords(s): Data Storage, Devices, Electronics, Energy Technology, Materials, Memory, Optoelectronics
Category(s): -Chemistry, -Materials, -Optics, -Nanotechnology, -Sensors tech, Technology Classifications > 2. Physical Science > Electronics/Semiconductors