Ultra-high Critical Current Density and Pinning Force in High-Temperature Superconducting Wires

­High-temperature superconducting (HTS) wires with enhanced critical current density and pinning force through advanced defect engineering and self-assembled BZO nanocolumns.

Background:

High-temperature superconducting (HTS) wires, which utilize heteroepitaxial deposition of HTS materials on single-crystal-like substrates, are poised to revolutionize large-scale applications such as commercial nuclear fusion and various electric power and defense industry uses.  However, current price/performance metrics for these HTS wires, or coated conductors, are not yet favorable for widespread adoption. 

Technology Overview:

This University at Buffalo technology enhances the critical current density (Jc) and pinning force (Fp) of HTS wires by employing advanced defect engineering in heteroepitaxially deposited thin films.  This method involves self-assembled BZO nanocolumns fabricated using pulsed laser deposition, resulting in record Jc values of ~190 MA/cm2 at 4.2K in a self-field and ~90 MA/cm2  at 4.2K in 7T. Additionally, at 20K, Jc values of over 150 MA/cm2 in a self-field and over 60 MA/cm2 at 7T were achieved.  The pinning force observed was ~6.4 TN/m3 at 4.2K, 7T and ~4.2 TN/mat 20K, 7T.  These are the highest Jc and Fp values reported to date for a wide range of fields and temperatures.  

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Header image is purely illustrative. Source: Moon, https://stock.adobe.com/uk/893356586, stock.adobe.com

Advantages:

The technology offers significant performance improvements over existing HTS wires, providing higher Jc and Fp values, which translates to enhanced efficiency and reduced costs for large-scale applications.

Applications:

  • Commercial nuclear fusion
  • Large-scale electric power systems
  • Advanced defense technologies

Intellectual Property Summary:

Provisional patent application 63/668,011 was filed on July 5, 2024.

Stage of Development:

TRL 6

Licensing Status:

Available for licensing or collaboration.

Figures:

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Patent Information: