A novel platform of positive-tone metal-containing resists for use in EUV lithography.
Background: Positive-tone resists are required for the most demanding features in the fabrication of integrated circuits such as etching a “contact hole.” One challenge in the design of metal containing resists is the scarcity of resists that exhibit positive-tone behavior.
Technology Overview: This technology describes the use 2-vinylbenzoate, 3-vinylbenzoate and 4-vinylbenzoate ligands in main-group metals that strongly absorb EUV (e.g. Sb, Sn, Te, Bi) as a means of producing positive-tone metal-containing resists. These ligands can be used to produce positive-tone, mono- and multinuclear complexes of highly EUV-absorbing main group metals.
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Advantages: • Excellent resolution • Superior line edge-roughness (LER) • High sensitivity • Strong adhesion properties • Able to create intricate patterns
Applications: • Semiconductor device fabrication
Intellectual Property Summary: Select from the following Patent application filed in US 02-18-2025 19/104,670
Stage of Development: • TRL 3 • https://en.wikipedia.org/wiki/Technology_readiness_level
Licensing Status: This technology is available for licensing.