Phosphonium metal halide semiconductors for PFAS detection

Advantages

  • Exceptional water stability, with demonstrated structural integrity for over 22 months in aqueous environments
  • Improved thermal stability by up to 160 °C higher than conventional ammonium-based analogues
  • Tunable optical and electrochemical properties suitable for sensing, optoelectronics, and energy applications
  • Enables low-cost, portable electrochemical detection of PFAS contaminants in water

Summary

Many metal halide semiconductors offer promising optical and electronic properties but suffer from poor water and thermal stability. This instability limits their use in real-world environments, especially in sensing, energy, and environmental monitoring applications where exposure to moisture and heat is unavoidable. Existing ammonium-based materials often degrade quickly, reducing device lifespan and reliability.

This technology introduces phosphonium-based metal halide semiconductors that achieve record water and thermal stability through a targeted single-atom substitution strategy. The materials maintain strong optical emission, accessible redox activity, and low charge-transfer resistance, enabling applications in PFAS sensing, energy storage, catalysis, and optoelectronics. Demonstrated long-term aqueous stability and enhanced thermal robustness support scalable, practical deployment.

 

The image illustrates the benefits of replacing conventional ammonium-based ligands with phosphonium-based ones and integrating them into metal halide semiconductor materials with excellent sensitivity towards PFAS molecules in aqueous samples.

Desired Partnerships

  • License 
  • Sponsored Research 
  • Co-Development  

 

Patent Information: