Brief Description: A patterning method, comprising: disposing a nanoparticle composition on a support material, the disposing being performed such that the nanoparticle composition defines a patterned region having an average inter-nanoparticle distance of less than about 5 nm; and selectively etching the support material so as to give rise to in the support material a plurality of arrayed structures substantially in register with the patterned region of the nanoparticle composition.An article, comprising an article made according to the present disclosure.A workpiece, comprising: an etchable support material; and a nanoparticle composition, the nanoparticle composition being disposed on the support material as a monolayer, the nanoparticle composition defining a patterned region having an average inter-nanoparticle distance of less than about 5 nm, and nanoparticles of the nanoparticle composition having ligands disposed thereon.An article, comprising: a substrate, the substrate having formed therein a plurality of structures arranged arrayed periodically, the structures defining an average inter-structure spacing of less than about 5 nm.
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Reference Media Title: Intellectual Property Title: Intellectual Property:
Intellectual Property: US2023-0185198A1
Docket Number: Docket#: 22-9827