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Kinetic Model for Molecular Beam Epitaxy Growth of III-V Bismide Alloys
Background Bismuth-containing III-V semiconductor alloys have received considerable attention as materials for optoelectronic devices operating in the mid- and long-wave infrared spectrum. The infrared spectrum finds important applications in both commerce and government, including medical imaging and diagnostics, autonomous vehicle sensors, telecommunications,...
Published: 2/23/2023   |   Inventor(s): Stephen Schaefer, Marko Milosavljevic, Rajeev Reddy Kosireddy, Shane Johnson
Keywords(s): Defense Applications, Electronics, Epitaxy, Infrared, Materials and Electronics, Modeling, Molecular Beam Epitaxy, Optoelectronics, Semiconductor Processing, Thin Films
Category(s): Physical Science, Advanced Materials/Nanotechnology, Semiconductors, Materials & Processes