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Spin XOR Gate in Ferromagnet-Nonmagnet Heterostructures
A device capable of combining non-volatile memory with spin based-processing to dramatically increase processing speed and lower the power requirement of many CMOS logic gates. Current data search devices rely on complementary metal-oxide semiconductor (CMOS) technology. Although CMOS has long been the gold standard, it is limited by the number...
Published: 7/11/2024   |   Inventor(s): Igor Zutic, Roland Kawakami, Hanan Dery, Ilya Krivorotov, Lu Sham, Jing Shi, Hua Wen
Keywords(s): Technologies
Category(s): Technology Classifications > Computers, Campus > University at Buffalo