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Search Results - dong+ji
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III-Nitride Based N-Polar Vertical Tunnel Transistors with High-Power Functionality
All electronic devices rely on power semiconductor devices to control or convert electrical energy in order to operate properly. Gallium nitride (GaN) materials are preferred because they have greater power conversion efficiency than silicon, resulting in smaller, faster transistors that can withstand higher electric fields and operate at higher temperatures....
Published: 2/23/2023
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Inventor(s):
Srabanti Chowdhury
,
Dong Ji
Keywords(s):
Materials and Electronics
Category(s):
Semiconductor Devices