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Multi-Threshold FinFET Design via Fin Shape Control
Lead Inventor: Soha HassounTufts University Case T001998Overview: Design technique for creating multi-threshold FinFET transistors via fin shape control.Technology: A process for modifying the doping and geometric cross section of three-dimensional transistor fins in order to allow both low-power and high-power transistors on a single integrated circuit.Opportunity:...
Published: 8/17/2021
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Inventor(s):
Soha Hassoun
,
Brad Gaynor
Keywords(s):
Category(s):
Materials
,
Semiconductor