NU 2021-078 INVENTORS
Mark Hersam*
Eden B Aklile
Qiucheng Li
Xiaolong Liu
SHORT DESCRIPTION
This invention presents a novel method for the synthesis of mixed-dimensional lateral heterostructures with integrated 2D metallic borophene and 1D semiconducting graphene nanoribbons, offering atomically precise metal-semiconductor heterojunctions for advanced nanoelectronic applications. BACKGROUND
The integration of two-dimensional (2D) materials with distinct electronic properties has been a significant challenge due to the need for interfacial lattice matching and compatible growth conditions. Traditional methods have been limited to specific material combinations, such as graphene/hexagonal boron nitride. Borophene, a 2D material with unique electronic properties, offers a promising alternative due to its polymorphic nature and bonding flexibility. This invention addresses the limitations of existing technologies by enabling the synthesis of mixed-dimensional heterostructures with atomically abrupt interfaces, paving the way for innovative nanoelectronic devices. ABSTRACT
The invention introduces a method for synthesizing mixed-dimensional lateral heterostructures by combining 2D metallic borophene with 1D semiconducting armchair-oriented graphene nanoribbons (aGNRs). This is achieved through the sequential deposition of boron and 4,4''-dibromo-p-terphenyl (DBTP) on a silver substrate, followed by controlled post-annealing in ultrahigh vacuum. The resulting borophene/aGNR interfaces are structurally and electronically abrupt, forming atomically well-defined metal-semiconductor heterojunctions. This advancement overcomes previous synthesis challenges, offering a new approach to creating nanoelectronic components with precise atomic control. APPLICATIONS
Thin-film transistors
Optoelectronics
High-frequency logic
Energy conversion and storage
Quantum information technologies
Wearable physiological monitors
ADVANTAGES
Overcomes limitations of traditional 2D/2D heterojunctions
First integration of borophene with graphene nanoribbons
Atomically abrupt interfaces with no interface states
Promising for atomically precise nanoelectronics
PUBLICATIONS
Mark C. Hersam et al., "Self-Assembled Borophene/Graphene Nanoribbon Mixed-Dimensional Heterostructures," Nano Letters, April 30, 2021. IP STATUS
Issued US Patent US12116279B2