Background
Cadmium telluride (CdTe) photovoltaic technology is considered one of the most successful commercial thin film solar cell technologies, boasting a power conversion efficiency of approximately 23%. Despite this achievement, the current power conversion efficiency for CdTe modules is still far from the theoretical power conversion efficiency of 32% per the Shockley-Queisser Efficiency Limit. To overcome this gap and drive progress, innovation is required to push cell efficiency and reduce the cost of domestic CdTe modules. Also, ensuring the long-term stability of CdTe solar module performance over a 30-year warranty period is crucial.
Attempts to improve the power conversion efficiency of polycrystalline CdTe devices have been developed including group V doping. Existing evidence demonstrates the in-situ group V doping has proven effective in creating highly efficient CdSeTe solar cells with excellent stability. However, significant challenges remain, including addressing the high activation ratio of in-situ group V dopants (currently >10% compared to the current 3-5%) and enhancing the back contact for in-situ group V doped CdSeTe to facilitate better hole collection.
Invention Description
A researcher at Arizona State University has developed a method of selective grain boundary doping in polycrystalline CdTe (and CdSeTe) thin films for solar technologies, using group V elements or other elements as dopants. This method of doping could significantly reduce the diffusion barrier of the dopants (e.g., Cu, As, P, Sb, and Bi) into the grain boundaries and then diffused into the CdTe (or CdSeTe) grain to promote device performance.
Potential Applications:
Benefits and Advantages: