High-resolution room-temperature thermometers described in the literature as a function of their resolution and footprint area. Highlighted area shows microscale and nanokelvin resolution. The projected resolution and footprint of the proposed Tunneling-Diffusion Edge Sensor (TDES) are marked in blue.
Invention Summary:
Ultrahigh-resolution thermometry is critical for future advances in bio-calorimetry, bolometry for sensing and imaging in infrared and terahertz (THz) range, as well as thermal metrology for electronic, optoelectronic and quantum devices.
Rutgers researchers have significantly improved their previously developed technology, called Band-Edge Thermometer (BET), by developing a new sensor called a Tunneling-Diffusion Edge Sensor (TDES). The invention consists of a semiconductor tunneling diode structure, where an electrical current is passed because of quantum tunneling of charge across the barrier when a bias is applied across the device. The current-voltage characteristic of tunneling diodes is temperature-dependent because of the temperature-dependent band structure and carrier population in the semiconductor layers. Therefore, the resistance of the tunnel diode at the sharp negative differential resistance region provides a very sensitive signal for temperature measurement, which would theoretically allow nanokelvin-resolution thermometry with microscale footprint at room temperature.
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Intellectual Property & Development Status: Provisional patent application filed, patent pending. Available for licensing and/or research collaboration. For any business development and other collaborative partnerships contact marketingbd@research.rutgers.edu.