This invention is a type of ultra-high-speed electro-optic modulator (>100GHz) that integrates nonlinear optical polymers with thin film waveguides to allow for high-bandwidth modulation with low drive voltage. These devices could offer a practical replacement for silicon nitride or thin-film lithium niobate modulators. Unlike conventional silicon and coherent method based on lithium niobate modulators, which depend heavily on digital signal processing (DSP), this platform can reduce DSP load through its intrinsic high-bandwidth operation. By reducing DSP-related power consumption, this technology enables higher GPU density, lower cooling requirements, and improved overall data center efficiency. Background: AI data centers and high-performance computing systems are increasingly constrained not by compute capability, but by power consumption and thermal limits. Current optical interconnect solutions rely on DSP-intensive architectures, which introduce significant energy overhead, heat generation, and system complexity. This technology addresses these limitations by enabling direct, high-bandwidth modulation that reduces dependence on DSP, leading to improved system efficiency and scalability. Applications:
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