Thermal Atomic Layer Etching of Cobalt and Other Transition Metal Films

A novel stepwise chemical etching method for precise and controlled removal of metal surfaces using protic compounds.

Technology Summary

This technology introduces a method for etching metal or element surfaces by initially contacting the surface with a protic compound to create a modified layer, followed by exposure to a protic ligand-forming compound that reacts to form and remove a volatile metal- or element-containing compound, resulting in controlled partial etching of the surface. The process may be conducted in cycles and is suitable for use with ALD (Atomic Layer Deposition) systems, allowing for precise surface modification demonstrated through scanning electron microscopy.

Key Advantages

• Enables highly controlled etching at the atomic or molecular level.
• Produces volatile metal-containing compounds for clean removal.
• Compatible with existing ALD systems for integration into semiconductor manufacturing.
• Effective across different metals and elemental surfaces.
• Adjustable etching depth through cycle control and temperature variation.

Market Opportunities

• Semiconductor manufacturing for precise metal layer patterning.
• Microelectronics and nanotechnology device fabrication.
• Surface treatment in advanced materials engineering.
• Thin film technology and catalyst surface modification.
• Research and development in atomic layer etching processes.

Stage of Development

Prototype

Patent Status

Issued: US10,982,336 & EP3436622

References & Publications

2016 Joseph P. Klesko; Marissa M. Kerrigan Charles H. Winter, Low Temperature Thermal Atomic Layer Deposition of Cobalt Metal Film, Chemistry of Materials Chemistry of Materials 2016,28,3,700-70