USF inventors have developed a new slope detection technique to exploit MTJ resistance switching from the high to low state. This technique can reduce or eliminate bit-to-bit process variation, and the need for data and reference current can be obviated compared to current techniques, thereby increasing sensing robustness. Multiple sampling, such as double sampling (triple sampling, etc.), can be used to increase the robustness even further. This development will lead to enhanced data storage systems with more efficient data storage and retrieval. The technology can be applied to STTRAM and MRAM, but it is not limited to these memory storage systems.
Diagram of the STTRAM with a Magnetic Tunnel Junction Switch