The change in resistance with the application of RF radiation is shown at different temperatures for thin films of NdNiO3 (at 25°C), VOx (at 60°C), and VO2 (at 75°C), respectively. The upper panels show the time of RF on and off whereas the lower panels show the corresponding change in resistance with RF radiation. The resistance increases with RF radiation for NdNiO3 and decreases for VO2 and VOx thin films.
Invention Summary:
Radio Frequency (RF) sensing is a revolutionary technology that spans across various fields such as wireless communication and medical imaging. Conventional RF sensing architectures are based on RF-to-intermediate frequency approach, and despite their advantages of signal filtering and amplification, these remain highly complex, demand high-precisions components, and have high power requirements.
Dr. Ramanathan and his team at Rutgers University have developed a resistance-based sensing method as an alternative for RF sensing. The technology utilizes thin films made of quantum materials which demonstrate rapid change in resistance while interacting with RF radiation. A wide range of materials include but not limited to NdNiO3, H-doped NdNiO3, LaNiO3, etc., and thin films of these materials can be grown using standard techniques like atomic layer deposition, sputtering, pulsed laser deposition etc. The technology has been validated using various materials across varying temperature conditions. This simple resistance change principle support compact designs, less power requirements, and fast response.
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Publications: • https://journals.aps.org/prapplied/abstract/10.1103/PhysRevApplied.22.014013
Intellectual Property & Development Status: Provisional application filed. Patent pending. Available for licensing and/or research collaboration. For any business development and other collaborative partnerships, contact: marketingbd@research.rutgers.edu