Quantum device using insulating topological material
Princeton Docket # 24-4093-1
Current quantum electronic devices often rely on conducting materials, which can limit their efficiency and scalability due to energy loss and interference from bulk conducting states. Princeton researchers have made a significant breakthrough in this field by developing a novel nanoelectronic device using insulating topological material that exhibits quantum coherence. For the first time, this team has successfully fabricated Bi4Br4 crystals that demonstrate the Aharonov-Bohm effect in an insulating material, which lacks bulk conducting states. This achievement is particularly noteworthy as it allows for the development of more efficient quantum electronic devices. By utilizing insulating topological materials, the device minimizes energy loss typically associated with bulk conducting states, potentially leading to more energy-efficient quantum devices. The observation of the Aharonov-Bohm effect in an insulating material indicates a high degree of quantum coherence, which is crucial for many quantum applications. Additionally, the use of insulating materials may offer better scalability prospects compared to traditional conducting materials in quantum devices. The ability to maintain quantum coherence in insulating materials could lead to more stable and reliable quantum systems, addressing some of the challenges faced by current quantum technologies. This breakthrough has direct applications in the development of quantum electronic devices, potentially advancing fields such as quantum computing, sensing, and communication.
Applications • Next generation quantum engineering • Quantum computers and sensors • Spintronic devices • Transistors
Advantages • High-speed operation of electronics • Thermoelectric efficiency • Resists disorder and defects • Reduced electron scattering
Citations
Hossain, M.S., Zhang, Q., Wang, Z. et al. Quantum transport response of topological hinge modes. Nat. Phys. 20, 776–782 (2024). https://doi.org/10.1038/s41567-024-02388-1
Stage of development
This material preparation process has been experimentally verified to generate an insulating topological material that shows quantum coherence.
Inventors
Md Shafayat Hossain Ph.D. is a postdoctoral research associate at Princeton University. His research focuses on topologically ordered states in 2D electron systems (2DESs) such as the well-known 5/2 fractional quantum Hall state in GaAs 2DESs.
Qi Zhang Ph.D. completed his doctoral degree at Princeton University in physics and is currently a postdoctoral researcher at the Lawrence Berkeley National Laboratory.
Zhiwei Wang Ph.D. is a professor at the Beijing Institute of Technology, his current research focuses on crystal growth of quantum materials including topological materials, unconventional superconductors, thermoelectric materials, etc.
Yugui Yao Ph.D. is a distinguished professor at the Beijing Institute of Technology. He is currently a major researcher in the field of quantum materials and novel physical properties.
Bing Lv Ph.D. is an associate professor of physics at the University of Texas Dallas. His lab currently researches quantum material physics and electronic materials.
M. Zahid Hasan Ph.D. is the Eugene Higgins Professor Higgins Professor of Physics at Princeton University. He is currently a major researcher in the field of Topological Quantum Matter.
Intellectual Property & Development status
Patent protection is pending.
Princeton is currently seeking commercial partners for the further development and commercialization of this opportunity.
Contact
Prabhpreet Gill
Princeton University Office of Technology Licensing • (609)258-3653 • psgill@princeton.edu