Long-term passivation stability of Phosphorus-doped polysilicon samples
Invention Summary:
In semiconductor industries, Spin-on-dopants (SOD) are being used as an alternative to conventional solution for forming doped poly-Si junctions and homogeneously diffused junctions. However, SOD also has its own limitation; Organic residues remained on the surface are hard to be removed and increases the process costs notably due to the need to include additional removal steps.
Rutgers researchers have developed a new process to create high purity doped poly-Si junctions and homogeneously diffused junctions through a clever combination of SOD and proximity doping. It circumvents the drawbacks of directly spinning SOD on substrate surface, while taking advantages of the benefits of SODs, significantly simplifying process step and reducing the use toxic, flammable, and hazardous gases for increased safety and reduced fabrication costs.
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Intellectual Property & Development Status: PCT patent application filed, patent pending. Available for licensing and/or search collaboration. For any business development and other collaborative partnerships contact: marketingbd@research.rutgers.edu