This invention is a novel method of modifying complementary metal-oxide semiconductor (CMOS) chips to detect polarization data. This technology aims to revolutionize polarization imaging by leveraging the existing infrastructure of CMOS technology through converting metallic wires in the back end of the line of a CMOS chip into linear polarizers (wire grid polarizers) or chiral metamaterials for circular polarizers. In doing so, the device can fully describe the polarization state of light. This is achieved by integrating polarizing components directly into the sensor array, allowing for compact and efficient polarization imaging. This data can then be processed to detect details and properties of an object being imaged that are undetectable with standard imaging methods. Current methods of polarization imaging often require bulky external filters, while this technology is compact and requires no external filters. Additionally, this technology is capable of simultaneously capturing multiple polarization states in real time, allowing for it to be utilized in live imaging applications. Background: Polarization imaging provides valuable information beyond the scope of standard imaging methods, and it is a widely used technique across many fields. However, current methods of polarization imaging require additional external filters to be added to a preexisting imaging device. These filters are often expensive and large, and they typically are not able to simultaneously capture multiple polarization states. This technology aims to solve these problems, making polarization imaging more compact, efficient, and versatile by incorporating polarization imaging technology into the CMOS chips. Applications:
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