NU 2020-248
INVENTORS William A. Gaviria Rojas Megan E. Beck Vinod K. Sangwan Mark C. Hersam*
SHORT DESCRIPTION Novel transistor architecture enabling high-gain analog amplification with flexible, semiconductors at scaled dimensions BACKGROUND Traditional transistors are produced with inflexible materials, which are incompatible with the demands of next-generation wearable electronics. Solution-processed carbon nanotubes are well positioned to address this need due to their mechanical flexibility and compatibility with low-cost additive manufacturing. However, to fully realize their potential in physiological sensing applications, circuit components must be manufactured with very small device dimensions. Unfortunately, transistors are now so small that unavoidable limitations due to the length scale of electrons moving through the semiconductor material are being encountered. These limitations, known as ”short channel effects” cause problems with performance and reliability of individual transistors and are a driving force behind the creation of new transistor architectures.
ABSTRACT Northwestern researchers have developed an ohmic-contact-gated transistor (OCGT), which is a novel transistor architecture that enables excellent amplification of extremely weak physiological signals while being produced from flexible, solution processed carbon nanotubes. In comparison to other solution-processed semiconductor amplifiers, this technology can achieve the highest reported length-scaled signal gain (~230 µm-1) and the highest reported width-normalized output current (~30 µA·µm-1) to date. These transistors are manufactured with standard photolithography techniques to enable relatively low-cost, fast production. As the OCGT design is compatible with other semiconducting materials, this invention serves as a general pathway to high-performance, solution-processed analog electronics.
APPLICATIONS
ADVANTAGES
PUBLICATION Gaviria Rojas W, Beck M, Sangwan V, GuoS and Hersam M (2021) Ohmic-Contact-Gated Carbon Nanotube Transistors for High-Performance Analog Amplifiers. Advanced Materials. IP STATUS A provisional application has been filed.