Technology Overview: Current non-volatile memory products, a $30B market, are dominated by flash memories. However, flash memory is facing challenges of unable to scale down for future market. Resistance-switching cell is one of the most promising contenders for replacing flash memory. The new member cell developed at Penn is a resistance-switching device using Si-based amorphous materials. The entire device is fabricated on Si substrate using standard CMOS equipment, therefore compatible with IC process. The memory cells showed very promising performance: 25ns switching time, 2~4V threshold, 100 or better on/off ratio, and long memory retention time.
Intellectual Property: US 9,425,393 US 9,905,760
Reference Media: Choi, BJ et al.; Adv Mater 2011 Sept 1, 23(33): 3847
Docket # Y6149