Fluorous Gated Field-Effect Transistor Sensors for PFAS Detection

Fluorous-interface gated field-effect transistor (FET) sensors provide a portable platform for real-time detection of PFAS and related fluorinated compounds in water. An extended-gate interface converts fluorous interactions into electrical signals, with an optional F-PANI configuration that adds an optical response for cross-verification. The platform is designed as a field-deployable alternative or complement to laboratory-based water testing for environmental, municipal, industrial, and remediation use.

Potential Applications / Applicability: Drinking-water, groundwater, surface-water, and industrial-effluent PFAS screening; wastewater and remediation monitoring; municipal, regulatory, defense, aerospace, and environmental field testing; handheld or distributed water-quality sensor networks.

Key Benefits:

• Supports selective PFAS detection through fluorous-interface chemistry.
• Provides real-time on-site readout using a portable extended-gate FET architecture.
• Adds optional dual electrical/optical F-PANI output for cross-verification.

Opportunity: Rowan seeks partners for licensing, prototype development, field validation, and integration into handheld, distributed, or IoT-enabled water-monitoring products.

Development Status: Initial laboratory data support fluorous-interface and F-PANI/FET sensing configurations. Development is focused on interface optimization, reproducibility, portable integration, and field validation. Patent application pending.