Ferromagnetic Transconductor for Better Tunability and Greater Conductivity

Combines Ferromagnetic and Non-Ferromagnetic Materials in a Conductor that Supports Magnetic Operation and Higher Levels of Current

This magnetic conductor uses a mixture of nanoscopic ferromagnetic and non-ferromagnetic materials to provide more tunable, wireless control and greater electrical conductivity for increased current flow. Ferromagnetic materials, when used as conductors, have dynamic frequency-dependent properties that can deliver a great degree of tunability to better control the conductors. However, they have much lower electrical conductivity than most commonly used conductor materials, limiting their utility as conductors.

Researchers at the University of Florida have designed a ferromagnetic conductor that uses a combination of ferromagnetic and non-ferromagnetic conductive metals in a lattice structure to provide a high degree of non-contact magnetic control. Furthermore, since it uses metals instead of semiconductors in the current flow layer, it can facilitate applications requiring a higher current.

 

Application

Transconductor with magnetic field control for high-current applications

 

Advantages

  • Utilizes non-contact magnetic field modulation, providing a new level of tunability and control
  • Handles high current flow more effectively than traditional conductors, improving the performance of high-power applications
  • Reduces noise relative to current flow, increasing efficiency

Technology

By combining ferromagnetic and non-ferromagnetic materials in a nano-superlattice structure, the magnetic field effect transconductor (M-FET) uses the properties of ferromagnetic metals without sacrificing conductivity. The non-contact magnetic field control of M-FET is more efficient than the traditional physical and electrical field control. Furthermore, M-FET's current flow layer uses a metal conductor rather than a semiconductor as in other conductors. Hence it is able to handle levels of current that are too high for a semiconductor. This higher level of current in turn, reduces relative noise.

Patent Information:
Title App Type Country Serial No. Patent No. File Date Issued Date Expire Date
Magnetic Field Effect Transconductors ORD/UTIL United States 16/024,468 10,586,918 6/29/2018 3/10/2020 6/29/2038